TSDF1205R Vishay Telefunken, TSDF1205R Datasheet - Page 2

• Manufacturer Part Number: TSDF1205R
• Description: Silicon NPN Planar RF Transistor
• Manufacturer: Vishay Telefunken

Maximum Thermal Resistance
T
Electrical DC Characteristics
T
Electrical AC Characteristics
T
TSDF1205/TSDF1205R/TSDF1205W/TSDF1205RW
www.vishay.de FaxBack [phone]
Vishay Telefunken
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage I
Collector-emitter saturation voltage
DC forward current transfer ratio
Transition frequency
Collector-base capacitance
Collector-emitter capacitance V
Emitter-base capacitance
Noise figure
Power gain
Transducer gain
2 (6)
amb
amb
amb
Parameter
= 25 _ C, unless otherwise specified
= 25 _ C, unless otherwise specified
= 25 _ C, unless otherwise specified
Parameter
Parameter
plated with 35
V
V
V
V
Z
V
f = 2 GHz (@F
V
Z
V
f = 2 GHz
CE
CB
CE
EB
CE
L
CE
CE
L
CE
m
m Cu
= 50
= 50
= 0.5 V, f = 1 MHz
= 2 V, I
= 1 V, f = 1 MHz
= 1 V, f = 1 MHz
= 2 V, I
= 2 V, I
= 2 V, I
= 2 V, I
Test Conditions
V
V
V
I
V
C
C
CE
CB
EB
CE
W
W
= 1 mA, I
= 5 mA, I
, f = 2 GHz
f = 2 GHz
= 1 V, I
= 12 V, V
= 10 V, I
= 2 V, I
Test Conditions
C
C
C
C
C
= 5 mA, f = 1 GHz
= 2 mA, Z
= 2 mA,
= 5 mA, Z
= 5 mA, Z
opt
Test Conditions
)
C
C
B
B
E
= 0
= 0
= 0.5 mA
= 2 mA
BE
= 0
= 0
S
S
0
= 50
= Z
= Z
Sopt
Sopt
W
,
,
,
3
Symbol
S
Symbol
C
G
G
C
C
21e
R
V
f
F
Symbol
T
cb
ce
eb
pe
pe
V
(BR)CEO
thJA
I
I
I
CEsat
h
CES
CBO
EBO
FE
2
Min
Min Typ Max Unit
50
4
Document Number 85065
Value
450
0.35
0.15
11.5
12.5
Typ
0.2
1.3
12
13
120 250
0.1
Rev. 5, 30-Jun-00
Max
100
100
0.5
2
K/W
Unit
GHz
Unit
pF
pF
pF
dB
dB
dB
dB
m
nA
m
V
V
A
A