TSDF1220R Vishay Telefunken, TSDF1220R Datasheet - Page 2

• Manufacturer Part Number: TSDF1220R
• Description: Silicon NPN Planar RF Transistor
• Manufacturer: Vishay Telefunken

Maximum Thermal Resistance
T
Electrical DC Characteristics
T
Electrical AC Characteristics
T
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TSDF1220/TSDF1220R/TSDF1220W/TSDF1220RW
Vishay Telefunken
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm
Collector cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown voltage I
Collector-emitter saturation voltage
DC forward current transfer ratio
Transition frequency
Collector-base capacitance
Collector-emitter capacitance V
Emitter-base capacitance
Noise figure
Power gain
Transducer gain
Third order intercept point at
output
2 (6)
amb
amb
amb
Parameter
= 25 _ C, unless otherwise specified
= 25 _ C, unless otherwise specified
= 25 _ C, unless otherwise specified
Parameter
Parameter
Test Conditions
plated with 35
V
V
V
V
Z
V
Z
V
Z
V
CE
CB
CE
EB
CE
S
CE
S
CE
0
CE
m
m Cu
= 50
= Z
= Z
= 0.5 V, f = 1 MHz
= 5 V, I
= 1 V, f = 1 MHz
= 1 V, f = 1 MHz
= 5 V, I
= 5 V, I
= 5 V, I
= 5 V, I
V
V
V
I
V
Sopt
Sopt
C
C
CE
CB
EB
CE
W
= 1 mA, I
= 30 mA, I
, f = 2 GHz
, Z
, Z
= 1 V, I
= 12 V, V
= 10 V, I
= 5 V, I
Test Conditions
C
C
C
C
C
L
L
= 20 mA, f = 1 GHz
= 3 mA,
= 20 mA,
= 20 mA,
= 20 mA, f = 2 GHz
= 50
= 50
Test Conditions
C
C
B
E
B
W
W
= 0
= 0
= 20 mA
BE
= 0
= 3 mA
, f = 2 GHz
, f = 2 GHz
= 0
3
Symbol
S
Symbol
C
G
C
C
IP
21e
R
V
f
F
Symbol
T
cb
ce
eb
pe
V
(BR)CEO
3
thJA
I
I
I
CEsat
h
CES
CBO
EBO
FE
2
Min
Min Typ Max Unit
50
6
Document Number 85066
Value
450
0.35
12.5
Typ
0.3
0.5
1.2
12
14
22
100 150
0.1
Rev. 6, 30-Jun-00
Max
100
100
0.5
2
K/W
Unit
dBm
GHz
Unit
pF
pF
pF
dB
dB
dB
m
nA
m
V
V
A
A