LRS13023 Sharp, LRS13023 Datasheet - Page 4

• Manufacturer Part Number: LRS13023
• Description: Stacked Chip 8M Flash and 1M SRAM
• Manufacturer: Sharp

SHARP
ostandbycurrent
3Power supply
3SRAM data retention voltage
3Operating temperature
IFully
3Three-state output
JNot designed or rated as radiation hardened
240 Pin
IFlash memory has P-type bulk silicon, and SRAM has N-type bulk silicon.
l.Description
OAccess Time
OOpemtingcment
(Total standby current is the summation of Flash memory’s standby current and SRAM’s one.)
Sk4M
The LRS1302 is a combination memory organized as
memory and
It is fabricated using silicon-gate CMOS process technology.
Flash memory
Flash memory Read
SRAM
Flashmemoryaccesstime
SRAM access time
static operation
TSOP ( TSOP~O-p-0819 plastic package
-
Block erase
Operating
Byte write
131,072X8
The contents described in Part 1 take first priority over Part 2 and Part 3.
bit static RAM in one package.
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Part 1 Overview
LRS13023
1,048,576X 8
2.7V to 3.6V
2.7~ to 3.6~
0.7 @ Typ.
40°C to +85”c
130 nsMax.
30 @ Max.
25 mAMax.
20 pA Max.
70 nsMax.
57 mAMax.
37 mAMax.
12 mAMax.
2.0 V Min.
,
bit flash
@ead/SPAM
(FLASH erase/write>Cr,=O to 85c
(T,=25”c, S-V,-3V,
(S-=ZS-Vc,0.2V)
(F-EZF-Vc,0.2V,
EbO.2V,
s-CEZS-vcc-0.2v)
hcxJ&oons)
(t&ti2Oons>
F-V&O.2V)
write)
2