K4S640832E-TC1H Samsung semiconductor, K4S640832E-TC1H Datasheet - Page 7

• Manufacturer Part Number: K4S640832E-TC1H
• Description: 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
• Manufacturer: Samsung semiconductor

DQ BUFFER OUTPUT DRIVE CHARACTERISTICS
AC CHARACTERISTICS
Notes :
Notes :
K4S640832E
CLK cycle time
CLK to valid
output delay
Output data
hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output
in Hi-Z
Output rise time
Output fall time
Output rise time
Output fall time
Parameter
1. Rise time specification based on 0pF + 50 Ohms to V
2. Fall time specification based on 0pF + 50 Ohms to V
3. Measured into 50pF only, use these values to characterize to.
4. All measurements done with respect to V
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Parameter
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
Symbol
trh
tfh
trh
tfh
(AC operating conditions unless otherwise noted)
Symbol
t
t
t
t
t
t
t
SAC
t
t
SHZ
SLZ
CC
OH
CH
CL
SS
SH
Measure in linear
region : 1.2V ~1.8V
Measure in linear
region : 1.2V ~1.8V
Measure in linear
region : 1.2V ~1.8V
Measure in linear
region : 1.2V ~1.8V
Condition
SS
Min
7.5
2.5
2.5
1.5
0.8
10
.
3
3
1
- 75
DD
SS
1000
Max
5.4
5.4
, use these values to design to.
6
6
, use these values to design to.
1.37
1.30
Min
2.8
2.0
Min
10
10
3
3
3
3
2
1
1
- 1H
Typ
3.9
2.9
1000
Max
6
6
6
6
Max
4.37
3.8
5.6
5.0
Min
10
12
3
3
3
3
2
1
1
Rev.0.1 Sept. 2001
- 1L
CMOS SDRAM
Volts/ns
Volts/ns
Volts/ns
Volts/ns
1000
Max
Unit
6
7
6
7
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
1,2
1,2
3
3
Note
1,2
1
2
3
3
3
3
2