K4S161622H-TC55 Samsung semiconductor, K4S161622H-TC55 Datasheet - Page 8

• Manufacturer Part Number: K4S161622H-TC55
• Description: 16Mb H-die SDRAM Specification
• Manufacturer: Samsung semiconductor

SDRAM 16Mb H-die(x16)
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
Note :
Operating Current
(One Bank Active)
Precharge Standby Current in
power-down mode
Precharge Standby Current
in non power-down mode
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
1. Unless otherwise notes, Input level is CMOS(V
2. Measured with outputs open. Addresses are changed only one time during tcc(min).
3. Refresh period is 32ms. Addresses are changed only one time during tcc(min).
4. K4S161622H-TC
Parameter
I
I
I
I
I
I
I
I
I
I
I
I
CC1
CC2
CC2
CC2
CC2
CC3
CC3
CC3
CC3
CC4
CC5
CC6
Symbol
P
PS
N
NS
P
PS
N
NS
Burst Length =1
t
I
CKE≤V
CKE & CLK≤V
CKE≥V
Input signals are changed one time during
30ns
CKE≥V
Input signals are stable
CKE≤V
CKE & CLK≤V
CKE≥V
Input signals are changed one time during
30ns
CKE≥V
Input signals are stable
I
Page Burst 2Banks Activated
t
t
CKE≤0.2V
RC
o
o
CCD
RC
= 0 mA
= 0 mA
≥t
≥t
RC
= 2CLKs
RC
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
(min), CS≥V
(min), CLK≤V
(min), CS≥V
(min), CLK≤V
IH
/V
Test Condition
IL
IL
IL
A
=V
(max), t
(max), t
CC
CC
= 0 to 70°C )
DDQ
= 10ns
= 10ns
IH
IH
IL
IL
/V
(min), t
(min), t
CC
CC
(max), t
(max), t
SSQ
= ∞
= ∞
) in LVTTL.
CC
CC
CC
CC
= 10ns
= 10ns
= ∞
= ∞
120
155
105
55
150
100
115
60
Version
Rev. 1.5 August 2004
15
25
15
2
2
5
3
3
1
105
140
70
90
CMOS SDRAM
130
80
95
90
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
2
3
2