M464S0924ETS Samsung semiconductor, M464S0924ETS Datasheet - Page 8

• Manufacturer Part Number: M464S0924ETS
• Description: 64MB / 128MB Unbuffered SODIMM
• Manufacturer: Samsung semiconductor

ABSOLUTE MAXIMUM RATINGS
Note :
CAPACITANCE
DC OPERATING CONDITIONS AND CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
64MB, 128MB Unbuffered SODIMM
Notes :
Voltage on any pin relative to Vss
Voltage on V
Storage temperature
Power dissipation
Short circuit current
Input capacitance (A
Input capacitance (RAS, CAS, WE)
Input capacitance (CKE0 ~ CKE1)
Input capacitance (CLK0 ~ CLK1)
Input capacitance (CS0 ~ CS1)
Input capacitance (DQM0 ~ DQM7)
Data input/output capacitance (DQ0 ~ DQ63)
Supply voltage
Input high voltage
Input low voltage
Output high voltage
Output low voltage
Input leakage current
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
1. V
2. V
3. Any input 0V ≤ V
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Parameter
IH
IL
DD
Parameter
(min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
(max) = 5.6V AC.The overshoot voltage duration is ≤ 3ns.
supply relative to Vss
Parameter
0
(V
~ A
DD
11
IN
, BA0 ~ BA1)
= 3.3V, T
≤ V
DDQ
A
.
Symbol
= 23°C, f = 1MHz, V
V
V
V
V
V
I
OH
DD
OL
LI
IH
IL
Symbol
C
C
C
C
C
C
C
V
OUT
V
IN1
IN2
IN3
IN4
IN5
IN6
Symbol
DD
IN
Min
-0.3
T
3.0
2.0
2.4
-10
, V
I
, V
P
-
STG
OS
REF
D
OUT
DDQ
SS
= 1.4V ± 200 mV)
= 0V, T
Min
15
15
15
15
15
10
10
M464S0924ETS
A
Typ
3.3
3.0
= 0 to 70°C)
0
-
-
-
Max
1.0 * # of component
25
25
25
21
25
12
12
V
DDQ
-55 ~ +150
Max
-1.0 ~ 4.6
-1.0 ~ 4.6
3.6
0.8
0.4
10
-
Value
+0.3
50
Min
25
25
15
15
15
10
10
M464S1724ETS
Rev. 1.4 March. 2004
Unit
uA
V
V
V
V
V
Max
45
45
25
21
25
12
12
I
I
OH
SDRAM
OL
Unit
mA
°C
W
V
V
Note
= -2mA
= 2mA
1
2
3
Unit
pF
pF
pF
pF
pF
pF
pF