M366S1723ETS-C7A Samsung semiconductor, M366S1723ETS-C7A Datasheet - Page 3
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M366S1723ETS-C7A
Manufacturer Part Number
M366S1723ETS-C7A
Description
(M3xxSxxxxETx-C7A) SDRAM Unbuffered Module
Manufacturer
Samsung semiconductor
Datasheet
1.M366S1723ETS-C7A.pdf
(26 pages)
Ordering Information
Operating Frequencies
Feature
• Burst mode operation
• Auto & self refresh capability (4096 Cycles/64ms)
• LVTTL compatible inputs and outputs
• Single 3.3V ± 0.3V power supply
• MRS cycle with address key programs Latency (Access from column address)
• All inputs are sampled at the positive going edge of the system clock
• Serial presence detect with EEPROM
168Pin Unbuffered DIMM based on 128Mb E-die (x8, x16)
64MB, 128MB, 256MB Unbuffered DIMM
Burst length (1, 2, 4, 8 & Full page)
Data scramble (Sequential & Interleave)
M366S1723ETU-C7A
M374S1723ETU-C7A
M366S3323ETU-C7A
M374S3323ETU-C7A
M366S0924ETS-C7A
M366S1723ETS-C7A
M374S1723ETS-C7A
M366S3323ETS-C7A
M374S3323ETS-C7A
Maximum Clock Frequency
CL-tRCD-tRP(clock)
Part Number
Density
128MB
128MB
128MB
128MB
256MB
256MB
256MB
256MB
64MB
Organization
16M x 64
16M x 64
16M x 72
16M x 72
32M x 64
32M x 64
32M x 72
32M x 72
8M x 64
133MHz(7.5ns)
3 - 3 - 3
@CL3
8Mx16(K4S281632E) * 4EA
16Mx8(K4S280832E) * 8EA
16Mx8(K4S280832E) * 8EA
16Mx8(K4S280832E) * 9EA
16Mx8(K4S280832E) * 9EA
16Mx8(K4S280832E)*16EA
16Mx8(K4S280832E)*16EA
16Mx8(K4S280832E)*18EA
16Mx8(K4S280832E)*18EA
Component Composition
- 7A
100MHz(10ns)
Rev. 1.3 February 2004
2 - 2 - 2
@CL2
Component
54-TSOPII
54-TSOPII
54-TSOPII
54-TSOPII
54-TSOPII
54-TSOPII
54-TSOPII
54-TSOPII
54-TSOPII
Package
SDRAM
1,000mil
1,375mil
1,125mil
1,375mil
1,125mil
1,375mil
1,125mil
1,375mil
1,125mil
Height