K4X56163PE Samsung semiconductor, K4X56163PE Datasheet - Page 19
K4X56163PE
Manufacturer Part Number
K4X56163PE
Description
16M x16 Mobile DDR SDRAM
Manufacturer
Samsung semiconductor
Datasheet
1.K4X56163PE.pdf
(48 pages)
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K4X56163PE-L(F)G
Mobile-DDR SDRAM
DM masking
The DDR SDRAM has a data mask function that can be used in conjunction with data write cycle, not read cycle. When the data mask
is activated (DM high) during write operation, DDR SDRAM does not accept the corresponding data.(DM to data-mask latency is
zero).
DM must be issued at the rising or falling edge of data strobe.
< Burst Length=8 >
0
1
2
3
4
5
6
7
8
CK, CK
Command
WRITE
NOP
NOP
NOP
NOP
NOP
NOP
NOP
NOP
t
DQSSmax
DQS
t
t
WPREH
WPRES
Din 0 Din 1 Din 2 Din 3
Din 4 Din 5 Din 6 Din7
DQs
DM
masked by DM=H
Figure.13 DM masking timing
19
March 2004
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