GS71116 ETC1 [List of Unclassifed Manufacturers], GS71116 Datasheet - Page 8

• Manufacturer Part Number: GS71116
• Description: 1Mb Asynchronous SRAM
• Manufacturer: ETC1 [List of Unclassifed Manufacturers]

Read Cycle 2: WE = V
Write Cycle
* These parameters are sampled and are not 100% tested
Rev: 1.06 6/2000
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Output Low Z from end of write
Address valid to end of write
Chip enable to end of write
Byte enable to end of write
Write recovery time (WE)
Write recovery time (CE)
Write to output in High Z
Address set up time
Write pulse width
Data set up time
Write cycle time
Data hold time
Parameter
IH
Address
CE
UB, LB
OE
Data Out
High impedance
Symbol
tWHZ
tWLZ
tWR1
tWC
tAW
tCW
tBW
tDW
tWP
tWR
tDH
tAS
8/15
*
*
tLZ
tOLZ
tBLZ
tAA
Min
tAC
10
---
7
7
7
5
0
7
0
0
0
3
tAB
-10
tRC
tOE
Max
---
---
---
---
---
---
---
---
---
---
---
4
Data valid
Min
12
---
8
8
8
6
0
8
0
0
0
3
-12
tBHZ
tOHZ
tHZ
Max
---
---
---
---
---
---
---
---
---
---
---
5
© 1999, Giga Semiconductor, Inc.
Min
15
10
10
10
10
---
7
0
0
0
0
3
-15
GS71116TP/J/U
Max
---
---
---
---
---
---
---
---
---
---
---
6
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns