GS71116ATP ETC1 [List of Unclassifed Manufacturers], GS71116ATP Datasheet - Page 7

• Manufacturer Part Number: GS71116ATP
• Description: 1Mb Asynchronous SRAM
• Manufacturer: ETC1 [List of Unclassifed Manufacturers]

AC Characteristics
Read Cycle
* These parameters are sampled and are not 100% tested.
Rev: 1.07 12/2004
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Byte disable to output in High Z (UB, LB)
Byte enable to output in low Z (UB, LB)
Output disable to output in High Z (OE)
Output enable to output in low Z (OE)
Chip disable to output in High Z (CE)
Chip enable to output in low Z (CE)
Output enable to output valid (OE)
Byte enable access time (UB, LB)
Output hold from address change
Chip enable access time (CE)
Address access time
Read cycle time
Parameter
Address
Data Out
Read Cycle 1: CE = OE = V
Previous Data
Symbol
t
t
t
t
t
OHZ
t
t
OLZ
BLZ
BHZ
t
t
t
t
t
HZ
RC
OE
OH
LZ
AA
AC
AB
t
*
*
*
*
OH
*
*
7/16
Min
IL
—
—
—
—
—
—
—
7
3
3
0
0
, WE = V
t
-7
AA
Max
t
3.5
—
—
—
—
—
RC
7
7
3
3
3
3
IH
, UB and, or LB = V
Min
—
—
—
—
—
—
—
8
3
3
0
0
-8
Max
3.5
3.5
3.5
3.5
—
—
—
—
—
8
8
4
Data valid
Min
10
—
—
—
—
—
—
—
3
3
0
0
-10
IL
Max
3.5
—
10
10
—
—
—
—
4
4
5
4
GS71116ATP/J/U
© 2001, GSI Technology
Min
12
—
—
—
—
—
—
—
3
3
0
0
-12
Max
3.5
—
12
12
—
—
—
—
5
5
6
5
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
—