AS7C251MNTD32A-200TQIN ALSC [Alliance Semiconductor Corporation], AS7C251MNTD32A-200TQIN Datasheet
AS7C251MNTD32A-200TQIN
Related parts for AS7C251MNTD32A-200TQIN
AS7C251MNTD32A-200TQIN Summary of contents
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... Address register Burst logic CLK D Write delay addr. registers CLK Control logic CLK 32/36 32/36 Data D Q Input Register CLK OE -200 5 200 3.2 450 170 90 Alliance Semiconductor AS7C251MNTD32A AS7C251MNTD36A CLK 1M x 32/36 SRAM Array 32/36 32/36 32/36 CLK Output Register OE 32/36 DQ[a,b,c,d] -166 -133 Units 6 7.5 ns 166 133 MHz 3.5 3 ...
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... PL-SCD PL-SCD PL-SCD PL-DCD PL-DCD PL-DCD NTD-PL NTD-PL NTD-PL NTD-FT NTD-FT NTD- Alliance Semiconductor AS7C251MNTD32A AS7C251MNTD36A Speed 200/166/133 MHz 200/166/133 MHz 200/166/133 MHz 200/166/133 MHz 200/166/133 MHz 200/166/133 MHz 7.5/8.5/10 ns 7.5/8.5/10 ns 7.5/8.5/10 ns 200/166/133 MHz 200/166/133 MHz 200/166/133 MHz 7.5/8.5/10 ns 7.5/8.5/10 ns 7.5/8.5/ ...
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... DQd5 V 26 SSQ V 27 DDQ 28 DQd6 29 DQd7 30 NC/DQPd Note: For pins 1, 30, 51, and 80, NC applies to the x32 configuration. DQPn applies to the x36 configuration. 1/17/05, V 1.2 ® TQFP 14 x 20mm Alliance Semiconductor AS7C251MNTD32A AS7C251MNTD36A DQPb/ DQb7 78 DQb6 77 V DDQ 76 V SSQ 75 DQb5 74 DQb4 ...
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... Functional description The AS7C251MNTD32A/36A family is a high performance CMOS 32 Mbit synchronous Static Random Access Memory (SRAM) organized as 1,048,576 words × bits and incorporates a LATE LATE Write. This variation of the 32Mb+ synchronous SRAM uses the No Turnaround Delay (NTD operation that improves bandwidth over pipelined burst devices normal pipelined burst device, the write data, command, and address are all applied to the device on the same clock edge ...
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... DESELECT or READ cycle should be given while the SRAM is transitioning out of SNOOZE PUS MODE. 1/17/05, V 1.2 ® or left floating, device follows interleaved Burst order. When DD is guaranteed after the time t is met. After entering SNOOZE MODE, all inputs except ZZ SB2 ZZI Alliance Semiconductor AS7C251MNTD32A AS7C251MNTD36A . The duration of SB2 ...
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... External NOP/WRITE ABORT (Begin Burst) High Next Current enables WRITEs to byte “b” (DQb pins); Alliance Semiconductor AS7C251MNTD32A AS7C251MNTD36A ...
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... Write Symbol DDQ OUT T stg T bias Symbol Min V 2.375 DD V 2.375 DDQ Vss 0 Alliance Semiconductor AS7C251MNTD32A AS7C251MNTD36A Burst Dsel Burst Burst Min Max Unit –0.3 +3.6 –0 0.3 DD –0 0.3 DDQ – 1.8 – –65 +150 –65 +135 Nominal Max 2 ...
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... V All V – 0.2V, Deselected < Max IL Deselected < 0.2V, ≤ 0.2V or ≥ V all V – 0. ≥ V Deselected Max DD ≤ ≥ V all Alliance Semiconductor AS7C251MNTD32A AS7C251MNTD36A Min Max -2 < OUT DDQ * 1 1.7 V DDQ ** -0.3 0.7 ** -0.3 0.7 1.7 – 0.7 -200 ...
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... CENS t 0.4 – 0.5 CENH t 1.4 – 1.5 ADVS t 0.4 – 0.5 ADVH Conditions Symbol ZZ > SB2 t PDS t PUS t ZZI t RZZI Alliance Semiconductor AS7C251MNTD32A AS7C251MNTD36A -133 1 Unit Notes Max Min Max 166 – 133 MHz – 7.5 – ns 3.5 – 3.8 ns 3.5 – 3.8 ns – 0 – ns 2,3,4 – 1.5 – – ...
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... Falling input HZOE OE Q(A1) Q(A2) Q(A2Y‘01) Read Continue Continue Continue Q(A2) Read Read Q(A2Y‘10) Q(A2Y‘01) Q(A2Y‘11) Alliance Semiconductor AS7C251MNTD32A AS7C251MNTD36A Undefined t CYC A3 Q(A2Y‘10) Q(A3) Q(A2Y‘11) Continue Inhibit Read Read Read Clock Q(A3) Q(A3Y‘01 HLZC ...
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... Dout Q(n-2) Q(n-1) Write DSEL D(A1) 1/17/05, V 1.2 ® D(A1) D(A2) D(A2Y‘01) Write Continue Continue Continue D(A2) Write Write Write D(A2Y‘10) D(A2Y‘01) D(A2Y‘11) Alliance Semiconductor AS7C251MNTD32A AS7C251MNTD36A t CYC D(A3) D(A2Y‘10) D(A2Y‘11) Continue Inhibit Write Write Clock D(A3) D(A3Y‘01 ...
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... Note: Ý = XOR when LBO = high/no connect. Ý = ADD when LBO = low. BW[a:d] is don’t care. 1/17/05, V 1.2 ® LZC OH D(A1) D(A2) Q(A3) D(A2Ý01) Burst Burst Read Read Write Read Q(A3) Q(A4) D(A2Ý01) Q(A4Ý01) Alliance Semiconductor AS7C251MNTD32A AS7C251MNTD36A t CYC HZC D(A5) Q(A6) Q(A4) Q(A4Ý01) t HZOE t LZOE Write Read Write D(A5) Q(A6) D(A7 DSEL ...
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... Command Read Burst Q(A1) Q(A1Ý01) Note: Ý = XOR when LBO = high/no connect; Ý = ADD when LBO = low low. 1/17/05, V 1.2 ® A2 Q(A1Ý01) Q(A1) Q(A1Ý10) STALL Burst DSEL Burst Q(A1Ý10) DSEL Alliance Semiconductor AS7C251MNTD32A AS7C251MNTD36A A3 D(A2) Burst Write Write Burst NOP NOP D(A2) D(A2Ý10) D(A2Ý01) D(A3 ...
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... Timing waveform of snooze mode CLK ZZ setup cycle ZZ t ZZI I supply I SB2 All inputs Deselect or Read Only (except ZZ) Dout 1/17/05, V 1.2 ® t PUS ZZ recovery cycle t RZZI Deselect or Read Only High-Z Alliance Semiconductor AS7C251MNTD32A AS7C251MNTD36A Normal operation Cycle ...
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... HZC 50Ω DDQ 30 pF* Figure B: Output load (A) at any given temperature and voltage. LZC IL Alliance Semiconductor AS7C251MNTD32A AS7C251MNTD36A Thevenin equivalent: +2.5V 319Ω/1667Ω D 7Ω OUT 5 pF* 353Ω/1538Ω GND *including scope and jig capacitance Figure C: Output load(B) ...
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... Package dimensions 100-pin quad flat pack (TQFP) TQFP Min Max A1 0.05 0.15 A2 1.35 1.45 b 0.22 0.38 c 0.09 0.20 D 13.90 14.10 E 19.90 20.10 e 0.65 nominal Hd 15.90 16.10 He 21.90 22.10 L 0.45 0.75 L1 1.00 nominal α 0° 7° Dimensions in millimeters 1/17/05, V 1.2 ® Alliance Semiconductor AS7C251MNTD32A AS7C251MNTD36A b e α ...
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... Operating temperature commercial ( 0° 70° C industrial ( -40 ° 85° Lead Free Part 1/17/05, V 1.2 ® –166 MHz AS7C251MNTD32A-166TQC AS7C251MNTD32A-166TQI AS7C251MNTD36A-166TQC AS7C251MNTD36A-166TQI AS7C251MNTD32A-200TQCN) NTD 32/36 A –XXX Alliance Semiconductor AS7C251MNTD32A AS7C251MNTD36A –133 MHz AS7C251MNTD32A-133TQC AS7C251MNTD32A-133TQI AS7C251MNTD36A-133TQC AS7C251MNTD36A-133TQI TQ C ...
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... Alliance products in such life-supporting systems implies that the manufacturer assumes all risk of such use and agrees to indemnify Alliance against all claims arising from such use. AS7C251MNTD32A AS7C251MNTD36A ® Copyright © Alliance Semiconductor All Rights Reserved Part Number: AS7C251MNTD32A AS7C251MNTD36A Document Version: V 1.2 ...