BS62UV2001SC BSI [Brilliance Semiconductor], BS62UV2001SC Datasheet

BS62UV2001SC

Manufacturer Part Number

BS62UV2001SC

Description

Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit

Manufacturer

BSI [Brilliance Semiconductor]

Datasheet

1.BS62UV2001SC.pdf (10 pages)

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R0201-BS62UV2001

• Wide Vcc operation voltage : 1.8V ~ 3.6V

• Ultra low power consumption :

• High speed access time :

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE2, CE1, and OE options

PRODUCT FAMILY

PIN CONFIGURATIONS

Brilliance Semiconductor Inc

FEATURES

VCC

CE2

A11

A13

A15

A17

A16

A14

A12

Vcc = 2.0V

Vcc = 3.0V

BS62UV2001TC

BS62UV2001STC

BS62UV2001SC

BS62UV2001TI

BS62UV2001STI

BS62UV2001SI

-70

-10

PRODUCT

GND

DQ0

DQ1

DQ2

A17

A16

A14

A12

FAMILY

BSI

100ns(Max.) at Vcc = 2.0V

70ns(Max.) at Vcc = 2.0V

BS62UV2001SC

BS62UV2001SI

BS62UV2001TC

BS62UV2001STC

BS62UV2001TI

BS62UV2001STI

0.08uA (Typ.) CMOS standby current

C-grade : 15mA (Max.) operating current

C-grade : 20mA (Max.) operating current

I- grade : 20mA (Max.) operating current

I- grade : 25mA (Max.) operating current

0.1uA (Typ.) CMOS standby current

TEMPERATURE

-40

OPERATING

Ultra Low Power/Voltage CMOS SRAM

256K X 8 bit

C to +70

C to +85

VCC

A15

CE2

A13

A11

A10

CE1

DQ7

DQ6

DQ5

DQ4

DQ3

A10

CE1

DQ7

DQ6

DQ5

DQ4

DQ3

GND

DQ2

DQ1

DQ0

. reserves the right to modify document contents without notice.

1.8~3.6V

RANGE

Vcc

70 / 100

Vcc=2V

SPEED

(ns)

The BS62UV2001 is a high performance, Ultra low power CMOS

Static Random Access Memory organized as 262,144 words by 8 bits

and operates from a wide range of 1.8V to 3.6V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current of

0.1uA and maximum access time of 70ns in 3.0V operation.

Easy memory expansion is provided by an active LOW chip

enable (CE1), an active HIGH chip enable (CE2), and active LOW

output enable (OE) and three-state output drivers.

The BS62UV2001 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS62UV2001 is available in the JEDEC standard 32 pin

450mil Plastic SOP, 8mmx13.4mm STSOP and 8mmx20mm TSOP.

BLOCK DIAGRAM

DESCRIPTION

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

CE1

CE2

A15

A16

A14

A12

Vdd

Gnd

A13

A17

Vcc=3V

0.7uA

1.5uA

Address

CCSB1

Buffer

STANDBY

Input

Control

POWER DISSIPATION

, Max)

Vcc=2V Vcc=3V Vcc=2V

0.5uA

1uA

Output

Buffer

Data

Input

Data

Decoder

Row

20mA

25mA

Operating

1024

BS62UV2001

, Max)

15mA

20mA

A11

Address Input Buffer

Column Decoder

Memory Array

A8 A3 A2 A1

Sense Amp

Write Driver

Column I/O

1024 x 2048

TSOP

STSOP

SOP

TSOP

STSOP

SOP

PKG TYPE

2048

256

Revision 2.4

April 2002

A10

Related parts for BS62UV2001SC

BS62UV2001SC Summary of contents

Page 1

... A17 1 VCC 32 A16 2 A15 31 A14 3 CE2 30 A12 A13 BS62UV2001SC BS62UV2001SI A11 A10 CE1 DQ7 21 DQ0 13 DQ6 20 DQ1 14 DQ5 19 DQ2 15 DQ4 18 GND 16 DQ3 17 Brilliance Semiconductor Inc ...

BSI PIN DESCRIPTIONS Name A0-A17 Address Input CE1 Chip Enable 1 Input CE2 Chip Enable 2 Input WE Write Enable Input OE Output Enable Input DQ0-DQ7 Data Input/Output Ports Vcc Gnd TRUTH TABLE MODE WE X Not selected (Power Down) ...

Page 3

BSI DC ELECTRICAL CHARACTERISTICS PARAMETER PARAMETER NAME Guaranteed Input Low V IL Voltage (2) Guaranteed Input High V IH Voltage (2) I Input Leakage Current IL I Output Leakage Current OL V Output Low Voltage OL V Output High Voltage ...

Page 4

BSI AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level AC TEST LOADS AND WAVEFORMS Ω 1333 2V OUTPUT 100PF INCLUDING Ω 2000 JIG AND SCOPE FIGURE 1A THEVENIN EQUIVALENT 800 OUTPUT ...

Page 5

BSI SWITCHING WAVEFORMS (READ CYCLE) (1,2,4) READ CYCLE1 ADDRESS D OUT (1,3,4) READ CYCLE2 CE1 CE2 D OUT (1,4) READ CYCLE3 ADDRESS OE CE1 CE2 D OUT NOTES high in read Cycle. 2. Device is continuously selected ...

Page 6

BSI AC ELECTRICAL CHARACTERISTICS WRITE CYCLE JEDEC PARAMETER PARAMETER NAME NAME t t AVAX E1LWH AVWL AVWH WLWH WHAX WR1 t t E2LAX WR2 t ...

Page 7

BSI (1,6) WRITE CYCLE2 ADDRESS CE1 CE2 WE D OUT D IN NOTES must be high during address transitions. 2. The internal write time of the memory is defined by the overlap of CE1 and CE2 active and ...

Page 8

BSI ORDERING INFORMATION BS62UV2001 PACKAGE DIMENSIONS STSOP - 32 R0201-BS62UV2001 BS62UV2001 SPEED 70: 70ns 10: 100ns GRADE + - + PACKAGE T: ...

Page 9

BSI PACKAGE DIMENSIONS (continued) TSOP - 32 SOP -32 R0201-BS62UV2001 b WITH PLATING BASE METAL SECTION A-A 9 BS62UV2001 Revision 2.4 April 2002 ...

Page 10

BSI REVISION HISTORY Revision Description 2.2 2001 Data Sheet release 2.3 Modify Standby Current (Typ. and Max.) 2.4 Modify some AC parameters R0201-BS62UV2001 Date Apr. 15, 2001 Jun. 29, 2001 April,11,2002 10 BS62UV2001 Note Revision 2.4 April 2002 ...

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