K6R4016C1D-KI10 Samsung, K6R4016C1D-KI10 Datasheet
K6R4016C1D-KI10
Manufacturer Part Number
K6R4016C1D-KI10
Description
Manufacturer
Samsung
Specifications of K6R4016C1D-KI10
Date_code
10+
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Part Number:
K6R4016C1D-KI10
Manufacturer:
SAMSUNG
Quantity:
2 148
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-
tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
K6R4004V1D
Document Title
Revision History
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
Rev No.
Rev. 0.0
Rev. 0.1
Rev. 1.0
Rev. 0.3
Rev. 1.0
Rev. 2.0
1Mx4 Bit High Speed Static RAM(3.3V Operating).
Operated at Commercial and Industrial Temperature Ranges.
History
Initial release with Preliminary.
Add Low Ver.
Change Icc, Isb and Isb1
1. Correct AC parameters : Read & Write Cycle mA
2. Delete Low Ver.
3. Delete Data Retention Characteristics
1. Delete 12ns,15ns speed bin.
2. Change Icc for Industrial mode.
1. Add the Lead Free Package type.
I
CC(Commercial)
I
I
CC(Industrial)
CC(Industrial)
I
SB1(L-ver.)
Item
Item
I
SB
10ns
12ns
15ns
10ns
12ns
15ns
10ns
8ns
8ns
8ns
Previous
Previous
130mA
100mA
100mA
110mA
115mA
0.5mA
90mA
80mA
70mA
85mA
30mA
85mA
- 1 -
Current
Current
100mA
1.2mA
80mA
65mA
55mA
45mA
85mA
75mA
65mA
20mA
90mA
75mA
Aug. 20. 2001
Sep. 19. 2001
Nov. 3. 2001
Nov.23. 2001
Dec.18. 2001
July. 26, 2004
Draft Data
PRELIMINARY
CMOS SRAM
Preliminary
Preliminary
Preliminary
Preliminary
Final
Final
Remark
July 2004
Rev 2.0
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