IRFR9024N International Rectifier Corp., IRFR9024N Datasheet
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IRFR9024N
Manufacturer Part Number
IRFR9024N
Description
Manufacturer
International Rectifier Corp.
Specifications of IRFR9024N
Case
D-pak
Date_code
08+
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Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The D-Pak is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
Thermal Resistance
I
I
I
P
V
E
I
E
dv/dt
T
T
R
R
R
AR
D
D
DM
AS
AR
J
STG
D
GS
@ T
@ T
JC
JA
JA
Ultra Low On-Resistance
P-Channel
Surface Mount (IRFR9024N)
Straight Lead (IRFU9024N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
@T
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
Parameter
Parameter
PRELIMINARY
GS
GS
@ -10V
@ -10V
G
Typ.
300 (1.6mm from case )
–––
–––
–––
IRFR/U9024N
HEXFET
T O -2 52 A A
D -P a k
-55 to + 150
S
D
Max.
0.30
-6.6
± 20
-11
-44
-10
3.8
38
62
-8
®
R
TO -2 5 1 A A
Power MOSFET
I-P a k
DS(on)
Max.
V
110
3.3
50
DSS
I
D
= -11A
PD - 9.1506
= 0.175
= -55V
Units
Units
°C/W
W/°C
V/ns
mJ
mJ
°C
W
A
V
A
6/26/97