AT49BV010-12VC ATMEL Corporation, AT49BV010-12VC Datasheet

AT49BV010-12VC

Manufacturer Part Number

AT49BV010-12VC

Description

Manufacturer

ATMEL Corporation

Datasheet

1.AT49BV010.pdf (14 pages)

Specifications of AT49BV010-12VC

Case

TSOP

Date_code

06+

Current page: 1 of 14
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Features

•

Description

The AT49(H)BV010 and the AT49(H)LV010 are 3-volt-only, 1-megabit Flash memo-

ries organized as 131,072 words of 8 bits each. Manufactured with Atmel’s advanced

nonvolatile CMOS technology, the devices offer access times to 55 ns with power dis-

sipation of just 90 mW over the commercial temperature range. When the devices are

deselected, the CMOS standby current is less than 50 µA.

To allow for simple in-system reprogrammability, the AT49(H)BV/(H)LV010 does not

require high input voltages for programming. Three-volt-only commands determine

the read and programming operation of the device. Reading data out of the device is

similar to reading from an EPROM. Reprogramming the AT49(H)BV/(H)LV010 is per-

formed by erasing the entire 1 megabit of memory and then programming on a byte by

byte basis. The typical byte programming time is a fast 30 µs. The end of a program

cycle can be optionally detected by the DATA polling feature. Once the end of a byte

program cycle has been detected, a new access for a read or program can begin.

The typical number of program and erase cycles is in excess of 10,000 cycles.

Pin Configurations

Pin Name

A0 - A16

I/O0 - I/O7

Single Supply Voltage, Range 2.7V to 3.6V

Single Supply for Read and Write

Fast Read Access Time – 55 ns

Internal Program Control and Timer

8K Bytes Boot Block With Lockout

Fast Erase Cycle Time – 10 seconds

Byte-by-byte Programming – 30 µs/Byte typical

Hardware Data Protection

DATA Polling for end of Program Detection

Low Power Dissipation

Typical 10,000 Write Cycles

– 25 mA Active Current

– 50 µA CMOS Standby Current

I/O0

PLCC Top View

Function

Addresses

Chip Enable

Output Enable

Write Enable

Data Inputs/Outputs

No Connect

A14

A13

A11

A10

I/O7

VCC

A11

A13

A14

A16

A15

A12

VSOP Top View (8 x 14 mm) or

TSOP Top View (8 x 20 mm)

Type 1

(continued)

A10

I/O7

I/O6

I/O5

I/O4

I/O3

GND

I/O2

I/O1

I/O0

1-megabit

(128K x 8)

Single 2.7-volt

Battery-Voltage

Flash Memory

AT49BV010

AT49HBV010

AT49LV010

AT49HLV010

Rev. 0677E–11/99

™

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