AO6702L Alpha Industries, AO6702L Datasheet
AO6702L
Manufacturer Part Number
AO6702L
Description
Manufacturer
Alpha Industries
Datasheet
1.AO6702L.pdf
(5 pages)
Specifications of AO6702L
Date_code
05+
Packing_info
SOT-163
Absolute Maximum Ratings T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Schottky reverse voltage
Continuous Forward Current
Pulsed Forward Current
Power Dissipation
Junction and Storage Temperature Range
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Thermal Characteristics Schottky
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
AO6702
N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO6702 uses advanced trench technology to provide
excellent R
provided to facilitate the implementation of a bidirectional
blocking switch, or for DC-DC conversion applications.
Standard Product AO6702 is Pb-free (meets ROHS & Sony
259 specifications). AO6702L is a Green Product ordering
option. AO6702 and AO6702L are electrically identical.
A
S
G
TSOP6
DS(ON)
1
2
3
6
5
4
and low gate charge. A Schottky diode is
K
N/C
D
B
B
A
C
C
A
A
A
A
A
A
=25°C unless otherwise noted
Steady-State
Steady-State
Steady-State
Steady-State
t ≤ 10s
t ≤ 10s
T
T
T
T
T
T
A
A
A
A
A
A
=25°C
=70°C
=25°C
=70°C
=25°C
=70°C
G
Symbol
Symbol
T
D
S
J
R
R
R
R
V
V
V
, T
I
I
P
I
DM
I
FM
GS
θJA
θJL
θJA
θJL
DS
D
KA
F
D
STG
K
A
Features
V
I
R
R
R
SCHOTTKY
V
D
DS
DS
DS(ON)
DS(ON)
DS(ON)
= 3.8A (V
-55 to 150
MOSFET
(V) = 20V
(V) = 20V, I
109.4
136.5
1.15
80.3
58.5
Typ
117
3.8
0.7
20
±8
10
43
3
< 50mΩ (V
< 65mΩ (V
< 95mΩ (V
GS
= 4.5V)
F
= 1A, V
GS
GS
GS
-55 to 150
Schottky
= 4.5V)
= 2.5V)
= 1.8V)
Max
0.92
0.59
110
150
135
175
20
10
80
80
2
1
F
<0.5V@0.5A
Units
Units
°C/W
°C/W
°C
W
V
V
A
V
A
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