AON2801L Alpha Industries, AON2801L Datasheet

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AON2801L

Manufacturer Part Number
AON2801L
Description
Manufacturer
Alpha Industries
Datasheet

Specifications of AON2801L

Date_code
10+
Packing_info
QFN
Alpha & Omega Semiconductor, Ltd.
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
General Description
The AON2801/L uses advanced trench technology to
provide excellent R
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.
AON2801 and AON2801L are electrically identical.
-RoHS Compliant
-AON2801L is Halogen Free
AON2801
Dual P-Channel Enhancement Mode Field Effect Transistor
A
Top
A
DS(ON)
C
DFN 2x2 Package
T
T
T
T
A
A
A
A
=25°C
=70°C
=25°C
=70°C
, low gate charge and
A
A
B
B
D1
Bottom
S1
G2
Steady-State
Steady-State
G1
t ≤ 10s
t ≤ 10s
S2
D2
Symbol
V
V
I
I
P
T
D
DM
J
DS
GS
DSM
, T
STG
Symbol
Features
V
I
R
R
R
R
R
D
DS
DS(ON)
DS(ON)
DS(ON)
θJA
θJA
= -3A
(V) = -20V
< 120mΩ (V
< 160mΩ (V
< 200mΩ (V
Maximum
-55 to 150
0.95
-2.3
Typ
120
175
-20
-15
1.5
±8
35
65
-3
G1
(V
GS
GS
GS
GS
D1
S1
= -4.5V)
= -4.5V)
= -2.5V)
= -1.8V)
Max
155
235
45
85
G2
D2
S2
www.aosmd.com
Units
Units
°C/W
°C/W
°C/W
°C/W
°C
W
V
V
A

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