AT49LV4096-12TI ATMEL Corporation, AT49LV4096-12TI Datasheet
AT49LV4096-12TI
Manufacturer Part Number
AT49LV4096-12TI
Description
Manufacturer
ATMEL Corporation
Specifications of AT49LV4096-12TI
Date_code
99+
Packing_info
TSOP
Features
•
•
•
•
•
•
•
•
•
•
Description
The AT49BV4096 and AT49LV4096 are 3-volt, 4-megabit Flash Memories organized
as 256K words of 16 bits each. Manufactured with Atmel's advanced nonvolatile
CMOS technology, the devices offer access times to 120 ns with power dissipation of
just 67 mW at 2.7V read. When deselected, the CMOS standby current is less than
50 µA.
To allow for simple in-system reprogrammability, the AT49BV4096/LV4096 does not
require high input voltages for programming. Reading data out of the device is similar
Pin Configurations
Pin Name
A0 - A17
CE
OE
WE
RESET
VPP
I/O0 - I/O15
NC
Low Voltage Operation
Fast Read Access Time - 120 ns
Internal Erase/Program Control
Sector Architecture
Fast Sector Erase Time - 10 seconds
Word-By-Word Programming - 10 µs/Word
Hardware Data Protection
DATA Polling For End Of Program Detection
Low Power Dissipation
Typical 10,000 Write Cycles
– 2.7V Read
– 5V Program/Erase
– One 8K Words (16K bytes) Boot Block with Programming Lockout
– Two 8K Words (16K bytes) Parameter Blocks
– One 232K Words (464K bytes) Main Memory Array Block
– 25 mA Active Current
– 50 µA CMOS Standby Current
I/O10
I/O11
GND
VPP
A17
I/O0
I/O8
I/O1
I/O9
I/O2
I/O3
NC
CE
OE
A7
A6
A5
A4
A3
A2
A1
A0
SOIC (SOP)
Function
Addresses
Chip Enable
Output Enable
Write Enable
Reset
Program/Erase Power Supply
Data Inputs/Outputs
No Connect
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
RESET
WE
A8
A9
A10
A11
A12
A13
A14
A15
A16
NC
GND
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
RESET
VPP
A15
A14
A13
A12
A11
A10
A17
WE
NC
NC
NC
NC
NC
A9
A8
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
TSOP Top View
Type 1
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
(continued)
A16
NC
GND
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
I/O12
I/O4
VCC
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
I/O8
I/O0
OE
GND
CE
A0
4-Megabit
(256K x 16)
3-volt Only
Flash Memory
AT49BV4096
AT49LV4096
Rev. 0985B–10/98
1
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