AT28BV6430TI ATMEL Corporation, AT28BV6430TI Datasheet



Manufacturer Part Number
ATMEL Corporation
1. Description
The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable
Read-only Memory specifically designed for battery powered applications. Its 64K of
memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced
nonvolatile CMOS technology, the device offers access times to 200 ns with power
dissipation less than 30 mW. When the device is deselected the standby current is
less than 50 µA.
The AT28BV64 is accessed like a Static RAM for the read or write cycles without the
need for external components. During a byte write, the address and data are latched
internally, freeing the microprocessor address and data bus for other operations. Fol-
lowing the initiation of a write cycle, the device will go to a busy state and
automatically clear and write the latched data using an internal control timer. The
device includes two methods for detecting the end of a write cycle, level detection of
RDY/BUSY and DATA polling of I/O
detected, a new access for a read or write can begin.
Atmel’s AT28BV64 has additional features to ensure high quality and manufacturabil-
ity. The device utilizes error correction internally for extended endurance and for
improved data retention characteristics. An extra 32-bytes of EEPROM are available
for device identification or tracking.
2.7V to 3.6V Supply
Low Power Dissipation
Read Access Time – 300 ns
Byte Write – 3 ms
Direct Microprocessor Control
High Reliability CMOS Technology
JEDEC Approved Byte-Wide Pinout
Industrial Temperature Ranges
– Full Read and Write Operation
– 8 mA Active Current
– 50 µA CMOS Standby Current
– DATA Polling
– READY/BUSY Open Drain Output
– Endurance: 100,000 Cycles
– Data Retention: 10 Years
. Once the end of a write cycle has been
64K (8K x 8)

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