CY7C1360C-200BZC Cypress Semiconductor Corporation., CY7C1360C-200BZC Datasheet

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CY7C1360C-200BZC

Manufacturer Part Number
CY7C1360C-200BZC
Description
Manufacturer
Cypress Semiconductor Corporation.

Specifications of CY7C1360C-200BZC

Package
QFP
Date_code
09+

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CY7C1360C-200BZC
Manufacturer:
CYPRESS
Quantity:
4
Cypress Semiconductor Corporation
Document #: 38-05540 Rev. *C
Features
Notes:
Logic Block Diagram – CY7C1360C (256K x 36)
1. For best-practices recommendations, please refer to the Cypress application note System Design Guidelines on www.cypress.com.
2. CE
• Supports bus operation up to 250 MHz
• Available speed grades are 250, 200, and 166 MHz
• Registered inputs and outputs for pipelined operation
• 3.3V core power supply
• 2.5V/3.3V I/O operation
• Fast clock-to-output times
• Provide high-performance 3-1-1-1 access rate
• User-selectable burst counter supporting Intel
• Separate processor and controller address strobes
• Synchronous self-timed writes
• Asynchronous output enable
• Single Cycle Chip Deselect
• Offered in Lead-Free 100-pin TQFP, 119-ball BGA and
• TQFP Available with 3-Chip Enable and 2-Chip Enable
• IEEE 1149.1 JTAG-Compatible Boundary Scan
• “ZZ” Sleep Mode Option
— 2.8 ns (for 250-MHz device)
— 3.0 ns (for 200-MHz device)
— 3.5 ns (for 166-MHz device)
Pentium
165-Ball fBGA packages
3
A0, A1, A
is for A version of TQFP (3 Chip Enable option) and 165 fBGA package only. 119 BGA is offered only in 2 Chip Enable.
MODE
BW
ADSC
BW
ADSP
BWE
ADV
BW
BW
CLK
GW
CE
CE
CE
OE
D
ZZ
C
B
A
1
2
3
®
interleaved or linear burst sequences
CONTROL
SLEEP
WRITE REGISTER
WRITE REGISTER
WRITE REGISTER
WRITE REGISTER
DQ
DQ
DQ
DQ
BYTE
C ,
BYTE
BYTE
B ,
D ,
A ,
BYTE
DQP
DQP
DQP
DQP
REGISTER
ENABLE
C
B
D
A
9-Mbit (256K x 36/512K x 18) Pipelined SRAM
ADDRESS
REGISTER
PIPELINED
CLR
ENABLE
COUNTER
2
BURST
LOGIC
AND
3901 North First Street
A
[1:0]
Q1
Q0
PRELIMINARY
®
WRITE DRIVER
WRITE DRIVER
WRITE DRIVER
WRITE DRIVER
DQ
DQ
DQ
DQ
BYTE
BYTE
BYTE
D
C ,
B ,
BYTE
A ,
,DQP
DQP
DQP
DQP
C
B
A
D
Functional Description
The CY7C1360C/CY7C1362C SRAM integrates 262,144 x 36
and 524,288 x 18 SRAM cells with advanced synchronous
peripheral circuitry and a two-bit counter for internal burst
operation. All synchronous inputs are gated by registers
controlled by a positive-edge-triggered Clock Input (CLK). The
synchronous inputs include all addresses, all data inputs,
address-pipelining Chip Enable (CE
Enables (CE
and ADV), Write Enables (BW
(GW). Asynchronous inputs include the Output Enable (OE)
and the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self-timed Write cycle.This part supports Byte Write
operations (see Pin Descriptions and Truth Table for further
details). Write cycles can be one to two or four bytes wide as
controlled by the Byte Write control inputs. GW when active
LOW cause s all bytes to be written.
The CY7C1360C/CY7C1362C operates from a +3.3V core
power supply while all outputs may operate with either a +2.5
or +3.3V supply. All inputs and outputs are JEDEC-standard
JESD8-5-compatible.
MEMORY
ARRAY
2
and CE
San Jose
SENSE
AMPS
3
[2]
REGISTERS
), Burst Control inputs (ADSC, ADSP,
,
OUTPUT
CA 95134
[1]
X
, and BWE), and Global Write
Revised February 23, 2005
OUTPUT
BUFFERS
1
), depth-expansion Chip
E
REGISTERS
CY7C1360C
CY7C1362C
INPUT
408-943-2600
DQP
DQP
DQP
DQP
D Q s
A
B
C
D

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