3LP01S-TL-E ON Semiconductor, 3LP01S-TL-E Datasheet

3LP01S-TL-E

Manufacturer Part Number

3LP01S-TL-E

Description

Manufacturer

ON Semiconductor

Datasheet

1.3LP01S-TL-E.pdf (4 pages)

Available stocks

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Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

3LP01S-TL-E

Manufacturer:

ON Semiconductor

Quantity:

2 400

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

3LP01S-TL-E

Manufacturer:

SANYO

Quantity:

51 000

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Ordering number : EN6681A

3LP01S

Features

Specifications

Absolute Maximum Ratings at Ta=25 C

Electrical Characteristics at Ta=25 C

Marking : XA

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

•

Low ON-resistance.

Ultrahigh-speed switching.

2.5V drive.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

Parameter

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

V (BR)DSS

R DS (on)1

R DS (on)2

R DS (on)3

V GS (off)

Symbol

V DSS

V GSS

t d (on)

t d (off)

I GSS

I DSS

Coss

Ciss

Crss

Tstg

I DP

Tch

P D

yfs

I D

t r

t f

SANYO Semiconductors

I D =- -1mA, V GS =0V

V DS =--30V, V GS =0V

V GS = 8V, V DS =0V

V DS =--10V, I D =--100 A

V DS =--10V, I D =--50mA

I D =- -50mA, V GS =- -4V

I D =- -30mA, V GS =- -2.5V

I D =- -1mA, V GS =--1.5V

V DS =--10V, f=1MHz

See specified Test Circuit.

PW 10 s, duty cycle 1%

3LP01S

71206 / 41006PE MS IM TB-00002191 / 12201 TS IM TA-2005

Conditions

DATA SHEET

min

--0.4

--30

Ratings

typ

Ratings

120

130

110

7.5

5.7

1.8

--55 to +150

Continued on next page.

max

0.15

--0.1

--0.4

150

- -30

10.4

15.4

--1.4

--1

No.6681-1/4

Unit

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