3LP01S-TL-E ON Semiconductor, 3LP01S-TL-E Datasheet
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3LP01S-TL-E
Manufacturer Part Number
3LP01S-TL-E
Description
Manufacturer
ON Semiconductor
Datasheet
1.3LP01S-TL-E.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
3LP01S-TL-E
Manufacturer:
ON Semiconductor
Quantity:
2 400
Company:
Part Number:
3LP01S-TL-E
Manufacturer:
SANYO
Quantity:
51 000
Ordering number : EN6681A
3LP01S
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
Electrical Characteristics at Ta=25 C
Marking : XA
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
•
•
•
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
Parameter
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
V (BR)DSS
R DS (on)1
R DS (on)2
R DS (on)3
V GS (off)
Symbol
Symbol
V DSS
V GSS
t d (on)
t d (off)
I GSS
I DSS
Coss
Ciss
Crss
Tstg
I DP
Tch
P D
yfs
I D
t r
t f
SANYO Semiconductors
I D =- -1mA, V GS =0V
V DS =--30V, V GS =0V
V GS = 8V, V DS =0V
V DS =--10V, I D =--100 A
V DS =--10V, I D =--50mA
I D =- -50mA, V GS =- -4V
I D =- -30mA, V GS =- -2.5V
I D =- -1mA, V GS =--1.5V
V DS =--10V, f=1MHz
V DS =--10V, f=1MHz
V DS =--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
PW 10 s, duty cycle 1%
3LP01S
71206 / 41006PE MS IM TB-00002191 / 12201 TS IM TA-2005
Conditions
Conditions
DATA SHEET
min
--0.4
--30
80
Ratings
typ
Ratings
120
130
110
7.5
5.7
1.8
27
24
55
11
8
--55 to +150
Continued on next page.
max
0.15
--0.1
--0.4
150
- -30
10.4
15.4
--1.4
10
54
10
--1
No.6681-1/4
Unit
Unit
mS
pF
pF
pF
ns
ns
ns
ns
V
V
W
V
V
A
A
A
A
C
C