AS29LV800 ANADIGICS Inc, AS29LV800 Datasheet - Page 22

• Manufacturer Part Number: AS29LV800
• Description: 3V 1M8/512K16 CMOS Flash EEPROM
• Manufacturer: ANADIGICS Inc

AS29LV800
AC test conditions
Test specifications
Erase and programming performance
* Erase/program cycle test is not verified on each shipped unit.
Latchup tolerance
Includes all pins except V
Recommended operating conditions
Test Condition
Output Load
Output Load Capacitance C
Input Rise and Fall Times
Input Pulse Levels
Input timing measurement reference levels
Output timing measurement reference levels
Parameter
Sector erase and verify-1 time (excludes 00h programming
prior to erase)
Programming time
Chip programming time
Erase/program cycles
Parameter
Input voltage with respect to
Input voltage with respect to
Current
Parameter
Supply voltage
Input voltage
22
*
CC
Device under test
. Test conditions: V
L
V
V
(including jig capacitance)
SS
SS
on all DQ, address, and control pins
on A9,
ALLIANCE SEMICONDUCTOR
OE, and RESET pin
CC
= 3.0V, one pin at a time.
C
L
*
V
SS
6.2K
1N3064
or equivalent
Word
Byte
V
®
SS
Symbol
V
V
V
V
CC
SS
IH
IL
V
SS
+3.0V
Min
2.7K
-
-
-
-
-
1N3064
or equivalent
+2.7
0
1.9
–0.5
Min
100,000
Typical
Min
-1.0
-0.5
-100
Limits
1.0
7.2
10
15
80
30
0.0-3.0
1.5
1.5
5
Max
+3.6
0
V
0.8
Max
+12.0
VCC
+100
1 TTL gate
CC
90, 120
Max
300
360
15
27
100
-
+ 0.3
DID 11-40002-A. 10/19/00
+0.5
October 2000
Unit
V
V
mA
cycles
Unit
Unit
sec
sec
µs
µs
pF
Unit
V
V
V
V
ns
V
V
V