K9F2808Q0B Samsung semiconductor, K9F2808Q0B Datasheet - Page 24

• Manufacturer Part Number: K9F2808Q0B
• Description: 16M x 8 Bit NAND Flash Memory
• Manufacturer: Samsung semiconductor

K9F2808Q0B-DCB0,DIB0
K9F2808U0B-VCB0,VIB0
Figure 8. Read2 Operation
RE
CLE
CE
WE
ALE
R/B
I/O
R/B
I/O
Figure 7-1. Sequential Row Read1 Operation (only for K9F2808U0B-Y and K9F2808U0B-V, valid within a block)
0
0
Block
~
~
7
7
00h
01h
1st half array
(GND input=L, 00h Command)
( A
Don t Care)
50h
4
~ A
Data Field
7
Start Add.(3Cycle)
:
A
0
~ A
2nd half array
A
Start Add.(3Cycle)
0
7
~ A
& A
3
K9F2808U0B-YCB0,YIB0
K9F2808U0B-DCB0,DIB0
9
Spare Field
& A
~ A
9
2 4
~ A
2 3
1st
2nd
Nth
t
R
1st half array
t
R
Data Field
1st half array
Data Output
(GND input =L, 01h Command)
1st
2nd half array
On K9F2808U0B_Y or K9F2808U0B_V
CE must be held
Data Field
low during tR
24
2nd half array
Spare Field
t
R
Spare Field
Data Output
(528 Byte)
1st
2nd
Nth
Data Output(Sequential)
2nd
Spare Field
FLASH MEMORY
1st half array
(GND input=H, 00h Command)
Data Field
t
R
2nd half array
Data Output
(528 Byte)
Spare Field
Nth
1st
2nd
Nth