AGR18090E TRIQUINT [TriQuint Semiconductor], AGR18090E Datasheet

AGR18090E

Manufacturer Part Number

AGR18090E

Description

90 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor

Manufacturer

TRIQUINT [TriQuint Semiconductor]

Datasheet

1.AGR18090E.pdf (9 pages)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

AGR18090EF

Manufacturer:

ASI

Quantity:

20 000

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class AB power amplifier applications. This device is

manufactured using advanced LDMOS technology

offering state-of-the-art performance and reliability. It

is packaged in an industry-standard package and is

capable of delivering a typical output power of 90 W,

which makes it ideally suited for today’s wireless

base station RF power amplifier applications.

AGR18090E

90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor

Introduction

The AGR18090E is a high-voltage, gold-metalized,

laterally diffused metal oxide semiconductor

(LDMOS) RF power transistor suitable for global sys-

tem for mobile communication (GSM), enhanced

data for global evolution (EDGE), and multicarrier

Features

Typical performance ratings for GSM EDGE

(f = 1.840 GHz, P

— Modulation spectrum:

— Error vector magnitude (EVM) = 1.7%.

— Gain = 15 dB.

— Drain Efficiency = 31%.

Typical continuous wave (CW) performance over

entire digital communication system (DCS) band:

— P

— Power gain: @ P

— Efficiency @ P

— Return loss: –10 dB.

High-reliability gold-metalization process.

Low hot carrier injection (HCI) induced bias drift

over 20 years.

Internally matched.

High gain, efficiency, and linearity.

Integrated ESD protection.

90 W minimum output power.

Device can withstand 10:1 voltage standing wave

ratio (VSWR) at 26 Vdc, 1.840 GHz, 90 W CW out-

put power.

Large signal impedance parameters available.

@ ±400 kHz = –63 dBc.

@ ±600 kHz = –73 dBc.

1dB

AGR18090EU

: 90 W typ.

Figure 1. Available Packages

OUT

1dB

= 50% typ.

= 30 W):

= 14 dB.

AGR18090EF

Table 1. Thermal Characteristics

Table 2. Absolute Maximum Ratings*

* Stresses in excess of the absolute maximum ratings can cause

Table 3. ESD Rating*

* Although electrostatic discharge (ESD) protection circuitry has

Caution: MOS devices are susceptible to damage from elec-

Drain-source Voltage

Gate-source Voltage

Drain Current—Continuous

Total Dissipation at T

Operating Junction Tempera-

Storage Temperature Range

Thermal Resistance,

been designed into this device, proper precautions must be

taken to avoid exposure to ESD and electrical overstress (EOS)

during all handling, assembly, and test operations. Agere

employs both a human-body model (HBM) and a charged-device

model (CDM) qualification requirement in order to determine

ESD-susceptibility limits and protection design evaluation. ESD

voltage thresholds are dependent on the circuit parameters used

in each of the models, as defined by JEDEC's JESD22-A114

(HBM) and JESD22-C101 (CDM) standards.

permanent damage to the device. These are absolute stress rat-

ings only. Functional operation of the device is not implied at

these or any other conditions in excess of those given in the

operational sections of the data sheet. Exposure to absolute

maximum ratings for extended periods can adversely affect

device reliability.

Derate Above 25 ˇC:

ture

Junction to Case:

AGR18090E

AGR18090EU

AGR18090EF

AGR18090EU

AGR18090EF

AGR18090EU

AGR18090EF

HBM

CDM

Parameter

trostatic charge. Reasonable precautions in han-

dling and packaging MOS devices should be

observed.

Parameter

Minimum (V)

= 25 °C:

1500

500

Sym

ı JC

Sym

September 2003

DSS

—

STG

Value

0.75

–65, 150

–0.5, 15 Vdc

Value

1.31

230

200

8.5

PEAK Devices

Class

°C/W

Unit

W/°C

Unit

Vdc

Adc

°C

Related parts for AGR18090E

AGR18090E Summary of contents

Page 1

... AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for global sys- tem for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications ...

Page 2

W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Electrical Characteristics Recommended operating conditions apply unless otherwise specified: T Table 4. dc Characteristics Parameter Drain-source Breakdown Voltage (V Gate-source Leakage Current (V Zero Gate Voltage Drain Leakage Current (V Forward ...

Page 3

... W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor FB1 R1 C7 Z12 C3 C2 Z11 DUT 3 A. Schematic ε 3.5. B. Component Layout Figure 2. AGR18090E Test Circuit C10 C11 C12 C13 C14 Z10 RF OUTPUT PINS: 1. DRAIN, 2. SOURCE, 3. GATE ...

Page 4

W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Typical Performance Characteristics Ω 0 RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo) GHz (f) (Complex Source Impedance) 1.805 (f1) 1.8425 (f2) 1.880 (f3) INPUT MATCH Figure 3. Series ...

Page 5

Typical Performance Characteristics 120 100 POUT Figure 4. Output Power and Efficiency vs. Input Power 950 800 ...

Page 6

W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Typical Performance Characteristics 16.0 15.5 15.0 14.5 14.0 13.5 13.0 12.5 12.0 11.5 11.0 1750 1770 1790 1810 1830 1850 1870 1890 1910 1930 1950 ...

Page 7

Typical Performance Characteristics -20.0 -25.0 -30 -35.0 -40 -45 -50 -55.0 -60.0 1 1842.5 MHz, Two Tone Measurement, 100 kHz Spacing DD Figure 8. ...

Page 8

W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Typical Performance Characteristics Gps 1 Figure 10. Power Gain, Efficiency, and EVM vs. Output Power ...

Page 9

... PEAK DEVICES AGR18090U M-AGR21090U AGR18090U YYWWLL XXXXX YYWWLL ZZZZZZZ ZZZZZZZ 2 AGR18090EF PEAK DEVICES AGR18090F M-AGR21090F AGR18090F YYWWLL XXXXX YYWWLL Label Notes: M before the part number denotes model program. X before the part number denotes engineering prototype. � YYWWLL is the date code including place of manufacture: year year work week (YYWW location (AL = Allentown, PA Bangkok, � ...

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