BTA216B-800E Philips Semiconductors, BTA216B-800E Datasheet

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BTA216B-800E

Manufacturer Part Number
BTA216B-800E
Description
Three quadrant triacs guaranteed commutation
Manufacturer
Philips Semiconductors
Datasheet
1.BTA216B-800E.pdf (6 pages)
Philips Semiconductors
GENERAL DESCRIPTION
Passivated
triacs in a plastic envelope suitable for
surface mounting, intended for use in
motor control circuits or with other highly
inductive loads. These devices balance
the
performance and gate sensitivity. The
"sensitive gate" E series and "logic level"
D series are intended for interfacing with
low power drivers, including micro
controllers.
PINNING - SOT404
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/ s.
February 2000
Three quadrant triacs
guaranteed commutation
SYMBOL PARAMETER
V
I
I
I
dI
I
V
P
P
T
T
T(RMS)
TSM
2
GM
PIN
t
stg
j
mb
DRM
GM
GM
G(AV)
T
1
2
3
/dt
requirements
main terminal 1
main terminal 2
gate
main terminal 2
Repetitive peak off-state
voltages
RMS on-state current
Non-repetitive peak
on-state current
I
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
guaranteed
2
DESCRIPTION
t for fusing
of
commutation
commutation
QUICK REFERENCE DATA
PIN CONFIGURATION
CONDITIONS
full sine wave;
T
full sine wave;
T
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
I
dI
over any 20 ms
period
TM
mb
j
G
= 25 ˚C prior to
/dt = 0.2 A/ s
= 20 A; I
SYMBOL
V
I
I
99 ˚C
T(RMS)
TSM
DRM
1
2
G
3
= 0.2 A;
1
voltages
current
PARAMETER
Repetitive peak off-state
RMS on-state current
Non-repetitive peak on-state
mb
MIN.
-40
-
-
-
-
-
-
-
-
-
-
BTA216B-
BTA216B-
BTA216B-
BTA216B series D, E and F
-600
600
SYMBOL
T2
1
MAX.
140
150
100
150
125
0.5
16
98
2
5
5
MAX.
600D
600E
600F
Product specification
600
140
16
-800
800
MAX.
800E
800F
800
140
16
-
Rev 1.000
UNIT
UNIT
A/ s
A
G
˚C
˚C
W
W
V
A
A
A
A
V
V
A
A
T1
2
s

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BTA216B-800E Summary of contents

Page 1

... Operating junction j temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed February 2000 BTA216B series D, E and F QUICK REFERENCE DATA SYMBOL PARAMETER BTA216B- BTA216B- ...

Page 2

... V = 400 110 ˚ T(RMS) dV /dt = 0.1V/ s; gate com open circuit DRM(max 0 / Product specification BTA216B series D, E and F MIN. TYP. MAX. UNIT - - 1.2 K 1.7 K K/W TYP. MAX. UNIT ...D ...D ...E ...F 1 ...

Page 3

... VGT(25 C) 1.6 I TSM 1.4 T time 1.2 1 0.8 0.6 0.4 100 1000 - Product specification BTA216B series D, E and F BT139 100 Tmb / C 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents Hz; T 99˚C. mb VGT(Tj 100 Fig.6. Normalised gate trigger voltage )/ V (25˚ ...

Page 4

... dIcom/dt (A/ms) 100 100 150 ( (25˚C), Fig.12. Mimimum, critical rate of change commutating current Product specification BTA216B series D, E and F BT139 typ max 0.5 1 1 unidirectional bidirectional 0.1ms 1ms 10ms 0. versus th j-mb pulse width t ...

Page 5

... MOUNTING INSTRUCTIONS Dimensions in mm Notes 1. Plastic meets UL94 V0 at 1/8". February 2000 10.3 max 11 max 15.4 0.85 max (x2) Fig.13. SOT404 : centre pin connected to mounting base. 11.5 9.0 2.0 3.8 5.08 Fig.14. SOT404 : minimum pad sizes for surface mounting. 5 Product specification BTA216B series D, E and F 4.5 max 1.4 max 2.5 0.5 17.5 Rev 1.000 ...

Page 6

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. February 2000 BTA216B series D, E and F 6 Product specification Rev 1.000 ...

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