GTS217E GTM [GTM CORPORATION], GTS217E Datasheet - Page 4

• Manufacturer Part Number: GTS217E
• Description: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
• Manufacturer: GTM [GTM CORPORATION]

Head Office And Factory:
GTS217E
Important Notice:
TEL : [phone] FAX : [phone]
TEL : [phone] ~ 4 FAX : [phone]
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM.
GTM reserves the right to make changes to its products without notice.
GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.
GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Taiwan: No. 17-1 Tatung Rd. Fu Kou Hsin-Chu Industrial Park, Hsin-Chu, Taiwan, R. O. C.
China: (201203) No.255, Jang-Jiang Tsai-Lueng RD. , Pu-Dung-Hsin District, Shang-Hai City, China
Fig 7. Maximum Safe Operating Area
Fig 9. Gate Charge Characteristics
Fig 10. Normalized Maximum Transient Thermal Impedance
Curve
Fig 8. Single Pulse Power Rating
Junction-to-Ambient
v.s. Junction Temperature
ISSUED DATE :2004/10/13
REVISED DATE :2006/12/25B
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