IRFP32N50K_04 IRF [International Rectifier], IRFP32N50K_04 Datasheet - Page 2

• Manufacturer Part Number: IRFP32N50K_04
• Description: HEXFET Power MOSFET
• Manufacturer: IRF [International Rectifier]

Diode Characteristics
Static @ T
Dynamic @ T

‚
ƒ
Notes:
I
I
Symbol
V
∆V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
Symbol
I
I
V
t
Q
I
t
DSS
GSS
d(on)
d(off)
SM
r
f
S
rr
RRM
on
2
fs
(BR)DSS
GS(th)
DS(on)
iss
oss
rss
oss
oss
oss
SD
g
gs
gd
rr
Repetitive rating; pulse width limited by
I
(BR)DSS
T
max. junction temperature.
Starting T
SD
I
AS
J
eff.
≤ 150°C
≤ 32A, di/dt ≤ 296A/µs, V
= 32A,
/∆T
J
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Reverse RecoveryCurrent
Forward Turn-On Time
= 25°C, L = 0.87mH, R
J
= 25°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
DD
≤ V
G
(BR)DSS
= 25Ω,
,
„
…
†
Pulse width ≤ 400µs; duty cycle ≤ 2%.
C
as C
500
–––
––– 0.135 0.16
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
3.0
Min. Typ. Max. Units
Min. Typ. Max. Units
14
–––
–––
–––
–––
–––
–––
oss
θ
Intrinsic turn-on time is negligible (turn-on is dominated by L
eff. is a fixed capacitance that gives the same charging time
oss
5280 –––
5630 –––
0.54 –––
–––
–––
–––
–––
–––
––– -100
–––
–––
–––
–––
120
550
155
265
–––
–––
–––
530
while V
9.0
28
48
54
45
30
–––
250
100
13.5
–––
190
–––
–––
–––
–––
–––
–––
–––
–––
130
800
–––
5.0
1.5
50
59
84
32
DS
is rising from 0 to 80% V
V/°C
µA
µA
nA
nC
ns
µC
pF
ns
V
Ω
V
S
A
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
I
R
V
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs „
I
D
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
GS
J
J
G
= 32A
= 32A
= 25°C, I
= 25°C, I
= 4.3Ω
= V
= 500V, V
= 400V, V
= 0V, I
= 10V, I
= 30V
= -30V
= 50V, I
= 400V
= 10V „
= 250V
= 10V „
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
D
DS
D
D
DS
DS
Conditions
= 250µA
Conditions
Conditions
= 32A, V
= 32A
= 250µA
= 32A
= 32A
GS
GS
DSS
= 0V to 400V …
= 1.0V, ƒ = 1.0MHz
= 400V, ƒ = 1.0MHz
= 0V
= 0V, T
.
D
www.irf.com
= 1mA†
GS
„
J
= 0V „
G
= 150°C
S
+L
D
S
D
)