IRFPS37N50 IRF [International Rectifier], IRFPS37N50 Datasheet - Page 2

• Manufacturer Part Number: IRFPS37N50
• Description: Power MOSFET(Vdss=500V, Rds(on)max=0.13ohm, Id=36A)
• Manufacturer: IRF [International Rectifier]

Static @ T
Avalanche Characteristics
Thermal Resistance
IRFPS37N50A
Dynamic @ T
Diode Characteristics
E
I
E
R
R
R
I
V
R
V
I
g
Q
Q
Q
t
t
t
t
C
C
C
C
C
C
I
I
V
t
Q
t
AR
DSS
GSS
SM
d(on)
d(off)
S
rr
on
r
f
2
AS
AR
(BR)DSS
GS(th)
fs
SD
DS(on)
iss
oss
rss
oss
oss
oss
rr
g
gs
gd
JC
CS
JA
eff.
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Drain-to-Source Leakage Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
J
= 25°C (unless otherwise specified)
J
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
= 25°C (unless otherwise specified)
Parameter
Parameter
Parameter
Parameter
Parameter
500
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
2.0
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
–––
20
Intrinsic turn-on time is negligible (turn-on is dominated by L
5579 –––
7905 –––
–––
––– 0.13
–––
–––
–––
–––
––– -100
–––
–––
–––
570
–––
–––
–––
–––
810
221
400
8.6
23
98
52
80
36
–––
250
100
860
–––
180
–––
–––
–––
–––
–––
–––
–––
–––
4.0
1.5
25
144
46
71
13
36
µC
µA
nA
nC
ns
pF
ns
V
V
A
V
S
Typ.
Typ.
0.24
–––
–––
–––
–––
–––
V
V
V
V
V
V
V
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
V
integral reverse
D
D
J
J
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
DS
GS
GS
GS
G
D
= 36A
= 36A
= 25°C, I
= 25°C, I
= 7.0 ,See Fig. 10
= 2.15
= V
= 500V, V
= 400V, V
= 0V, I
= 10V, I
= 30V
= -30V
= 50V, I
= 400V
= 10V, See Fig. 6 and 13
= 250V
= 0V
= 25V
= 0V, V
= 0V, V
= 0V, V
GS
, I
D
S
F
DS
D
D
D
Conditions
DS
DS
= 250µA
Conditions
Conditions
= 36A, V
= 36A
= 250µA
= 22A
GS
GS
= 22A
= 0V to 400V
Max.
Max.
1260
= 1.0V, ƒ = 1.0MHz
= 400V, ƒ = 1.0MHz
0.28
–––
36
44
40
= 0V
= 0V, T
www.irf.com
GS
J
= 0V
G
= 150°C
Units
Units
S
°C/W
+L
mJ
mJ
A
D
D
S
)