SE2525L-EK1 SIGE [SiGe Semiconductor, Inc.], SE2525L-EK1 Datasheet - Page 6

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SE2525L-EK1

Manufacturer Part Number
SE2525L-EK1
Description
Manufacturer
SIGE [SiGe Semiconductor, Inc.]
Datasheet
Internal Coupled Power Detector
Internal Coupled Positive Slope
Conditions: V
Internal Coupled Negative Slope
Conditions: V
28-DST-01 Rev 2.1 Apr-25-2006
PDZ
Symbol
Symbol
PDZ
VDET
VDET
VDET
VDET
VDET
VDET
PDR
PDR
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
LOAD
OUT
2
1
0
6
8
P
P
Detector voltage
Detector voltage
Detector voltage
Output Impedance
DC load impedance
Detector voltage
Detector voltage
Detector voltage
GND, T
otherwise noted
V
board, unless otherwise noted
OUT
OUT
SE2525L Internal Coupled Power Detector
CC
CC
DET
10
= V
= V
detect range
detect range
IN/DET
12
A
EN
EN
Output Power (dBm)
= 25 °C, as measured on SiGe Semiconductor’s SE2525L-EV1 evaluation board, unless
Figure 3: SE2525L Internal Coupled Power Detector Characteristic
Parameter
Parameter
14
= 3.3 V, f = 2.45 GHz, V
= 3.3 V, f = 2.45 GHz, V
SEL
(Positive)
16
= GND, T
18
20
RangeCharger™ 2.4GHz Power Amplifier with Power Detector
A
22
= 25 °C, as measured on SiGe Semiconductor’s SE2525L-EV1 evaluation
24
26
P
P
P
P
P
P
B
B
OUT
OUT
OUT
OUT
OUT
OUT
connected to V
connected to V
28
Confidential
= 23 dBm
= 19 dBm
= NO RF
= 23 dBm
= 19 dBm
= NO RF
Conditions
Conditions
QA042506
-
-
-
-
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1
0
REG
REG
7
, SLOPE
, V
DET
9
SE2525L Internal Coupled Power Detector
OUT load = 2.4 kΩ to ground, SLOPE
11
Min.
Min.
250
SEL
10
0
0
-
-
-
-
-
-
= Open Circuit, V
13
Output Power (dBm)
(Negative)
15
Preliminary Information
Typ.
1.15
0.73
0.35
Typ.
0.42
0.64
0.90
-
-
-
-
17
19
P
P
700
DET
Max.
Max.
1dB
1dB
-
-
-
-
-
-
-
21
IN/DET
SE2525L
23
SEL
dBm
dBm
Unit
Unit
kΩ
6 of 12
V
V
V
V
V
V
25
SEL
=
=

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