RU2013H RUICHIPS [Ruichips Semiconductor Co., Ltd], RU2013H Datasheet

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RU2013H

Manufacturer Part Number
RU2013H
Description
N-Channel Advanced Power MOSFET
Manufacturer
RUICHIPS [Ruichips Semiconductor Co., Ltd]
Datasheet
Copyright
Rev. A– AUG., 2011
Common Ratings
Mounted on Large Heat Sink
Features
Absolute Maximum Ratings
• 20V/13A,
• Super High Dense Cell Design
• Low On-Resistance
• Lead Free and Green Available
Applications
Reliable and Rugged
DC/DC Converters
R
R
R
DS (ON)
DS (ON)
DS (ON)
Symbol
R
V
V
T
I
P
T
I
DSS
GSS
STG
I
DP
JA
S
D
D
J
Ruichips Semiconductor Co., Ltd
=13
=16
=22
m
m
m
Drain-Source Voltage
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
300μs Pulse Drain Current Tested
Continuous Drain Current
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
(T
(Typ.) @ V
(Typ.) @ V
(Typ.) @ V
A
=25°C Unless Otherwise Noted)
GS
GS
GS
=10V
=4.5V
=2.5V
Parameter
N-Channel Advanced Power MOSFET
T
T
T
T
T
T
A
A
A
A
A
A
=25°C
=25°C
=25°C
=70°C
=25°C
=70°C
N-Channel MOSFET
Pin Description
SOP-8
-55 to 150
Rating
50
150
±12
4.5
3.1
20
13
10
40
2
RU2013H
www.ruichips.com
MOSFET
°C/W
Unit
°C
°C
W
V
A
A
A

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RU2013H Summary of contents

Page 1

... Rev. A– AUG., 2011 N-Channel Advanced Power MOSFET =10V GS =4.5V GS =2.5V GS Parameter T =25° =25° =25° =70° =25° =70°C A RU2013H MOSFET Pin Description SOP-8 N-Channel MOSFET Rating 20 ±12 150 -55 to 150 4.5 ① 3 www.ruichips.com Unit V °C ° ...

Page 2

... V =0V,V =0V,F=1MHz =0V =10V, DS Frequency=1.0MHz V =10V =10A GEN ④ V =16V =10A DS 2 RU2013H RU2013H Min. Typ. Max. 20 =0V T =85°C J 0.5 0.8 =0V ±100 =10A 13 = 1.2 580 124 =10V =4.5V, 2.1 3 www.ruichips.com ...

Page 3

... Typical Characteristics Power Dissipation T - Junction Temperature (°C) j Safe Operation Area V - Drain-Source Voltage (V) DS Copyright Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2011 Drain Current T - Junction Temperature (°C) j Thermal Transient Impedance Square Wave Pulse Duration (sec) 3 RU2013H www.ruichips.com ...

Page 4

... Typical Characteristics Output Characteristics V - Drain-Source Voltage (V) DS Drain-Source On Resistance V - Gate-Source Voltage (V) GS Copyright Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2011 Drain-Source On Resistance I - Drain Current (A) D Gate Threshold Voltage T - Junction Temperature (° RU2013H www.ruichips.com ...

Page 5

... Typical Characteristics Drain-Source On Resistance T - Junction Temperature (°C) j Capacitance V - Drain-Source Voltage (V) DS Copyright Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2011 Source-Drain Diode Forward V - Source-Drain Voltage (V) SD Gate Charge Q - Gate Charge (nC RU2013H www.ruichips.com ...

Page 6

... Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2011 6 RU2013H www.ruichips.com ...

Page 7

... Ordering and Marking Information RU2013 Package (Available SOP-8 Operating Temperature Range C : -55 to 150 ºC Assembly Material G : Green & Lead Free Packaging T : TUBE TR : Tape & Reel Copyright Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2011 7 RU2013H www.ruichips.com ...

Page 8

... MAX MIN 0.053 0.069 E 3.800 0.004 0.010 E1 5.800 0.053 0.061 e 1.270 (BSC) 0.013 0.020 L 0.400 θ 0.006 0.010 0° 0.185 0.200 8 RU2013H MM INCH MAX MIN MAX 4.000 0.150 0.157 6.200 0.228 0.244 0.050 (BSC) 1.270 0.016 0.050 8° 0° 8° www.ruichips.com ...

Page 9

... Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Copyright Ruichips Semiconductor Co., Ltd Rev. A– AUG., 2011 9 RU2013H www.ruichips.com ...

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