K6X1008T2D-B Samsung semiconductor, K6X1008T2D-B Datasheet - Page 4

• Manufacturer Part Number: K6X1008T2D-B
• Description: 128Kx8 bit Low Power CMOS Static RAM
• Manufacturer: Samsung semiconductor

RECOMMENDED DC OPERATING CONDITIONS
Note:
1. Commercial Product: T
2. Overshoot: Vcc+3.0V in case of pulse width 30ns.
3. Undershoot: -3.0V in case of pulse width 30ns.
4. Overshoot and undershoot are sampled, not 100% tested.
CAPACITANCE
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
K6X1008T2D Family
Input leakage current
Output leakage current
Operating power supply current
Average operating current
Output low voltage
Output high voltage
Standby Current(TTL)
Standby Current(CMOS)
Supply voltage
Ground
Input high voltage
Input low voltage
Input capacitance
Input/Output capacitance
. Industrial Product: T
A
utomotive Product: T
Item
Item
Item
A
=-40 to 85 C, Otherwise specified
A
A
=-40 to 125 C, Otherwise specified
1
=0 to 70 C, Otherwise specified
)
(f=1MHz, TA=25 C)
Symbol
I
I
V
V
I
I
I
CC1
CC2
I
SB1
I
CC
LO
SB
LI
OL
OH
Symbol
V
CS
I
Cycle time=1 s, 100%duty, I
V
Cycle time=Min, 100% duty, I
V
I
I
CS
CS
Other inputs=0~Vcc
IO
OL
OH
IN
IN
IN
C
C
=0mA, CS
=2.1mA
1
=-1.0mA
1
1
=Vss to Vcc
=V
IN
IO
=V
=V
0.2V or V
Vcc-0.2V, CS
IH
Symbol
IH
IH
or V
, CS2=V
Vcc
Vss
or CS
V
V
IH
IL
IL
1
=V
IN
2
=V
IL
V
IL
, CS
CC
, Other inputs=V
IL
2
or OE=V
-0.2V
Vcc-0.2V or CS
Test Condition
2
4
=V
Test Conditions
IH,
V
V
1)
-0.2
IN
IO
V
Min
IO
2.7
2.2
IO
IH
=0V
=0V
0
IN
=0mA, CS
=0mA, CS
or WE=V
=V
3)
IH
IH
2
or V
or V
0.2V,
IL
IL
1
IL
1
, V
=V
, Read
0.2V, CS
IO
IL
3.0/3.3
, CS
Typ
=Vss to Vcc
0
-
-
K6X1008T2D-B
K6X1008T2D-Q
K6X1008T2D-F
2
=V
Min
2
-
-
Vcc-0.2V,
IH,
Vcc+0.2
CMOS SRAM
Max
3.6
0.6
Max
0
Min Typ Max Unit
10
2.4
8
-1
-1
-
-
-
-
-
-
-
-
2)
September 2003
-
-
-
-
-
-
-
-
-
-
-
Revision 1.0
0.4
0.3
20
10
1
1
2
3
6
6
Unit
-
Unit
pF
pF
V
V
V
V
mA
mA
mA
mA
V
V
A
A
A
A
A