IRFU4510PBF International Rectifier Corp., IRFU4510PBF Datasheet

IRFU4510PBF

Manufacturer Part Number

IRFU4510PBF

Description

IPAK/MOSFET, 100V, 63A, 13.9 MOHM, 54 NC QG

Manufacturer

International Rectifier Corp.

Datasheet

1.IRFR4510PBF.pdf (11 pages)

Specifications of IRFU4510PBF

Lead_time

Pack_quantity

Comm_code

85412900

Eccn

EAR99

Current page: 1 of 11
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Applications

Benefits

www.irf.com

Notes through

Absolute Maximum Ratings

Avalanche Characteristics

Thermal Resistance

STG

AS (Thermally limited)

JC

JA

@ T

High Efficiency Synchronous Rectification in SMPS

Uninterruptible Power Supply

High Speed Power Switching

Hard Switched and High Frequency Circuits

Improved Gate, Avalanche and Dynamic dV/dt

Ruggedness

Fully Characterized Capacitance and Avalanche

Enhanced body diode dV/dt and dI/dt Capability

Lead-Free

SOA

Symbol

= 25°C

= 100°C

= 25°C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Junction-to-Case

Junction-to-Ambient (PCB Mount)

Junction-to-Ambient

are on page 11

Parameter

@ 10V (Silicon Limited)

@ 10V (Package Limited)

Gate

IRFR4510PbF

IRFU4510PbF

IRFR4510PbF

Typ.

–––

See Fig. 14, 15, 22a, 22b

DPak

D (Silicon Limited)

D (Package Limited)

DSS

DS(on)

-55 to + 175

Max.

0.95

252

143

± 20

300

127

HEXFET Power MOSFET

Drain

max.

typ.

IRFU4510PbF

Max.

1.05

110

IPAK

11.1m

13.9m

Source

100V

63A

56A

Units

W/°C

°C/W

°C

97784

05/02/12

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