NX3008PBKT,115 Philips Semiconductors, NX3008PBKT,115 Datasheet

NX3008PBKT,115

Manufacturer Part Number

NX3008PBKT,115

Description

SOT416/30 V, 200 mA P-channel Trench MOSFET

Manufacturer

Philips Semiconductors

Datasheet

1.NX3008PBKT115.pdf (16 pages)

Specifications of NX3008PBKT,115

Lead_time

Pack_quantity

3000

Comm_code

85412100

Eccn

EAR99

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1. Product profile

1.1 General description

1.2 Features and benefits

1.3 Applications

1.4 Quick reference data

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT416 (SC-75)

Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Table 1.

[1]

Symbol

Static characteristics



DSon

NX3008PBKT

30 V, 200 mA P-channel Trench MOSFET

Rev. 1 — 1 August 2011

Very fast switching

Low threshold voltage

Trench MOSFET technology

Relay driver

High-speed line driver

Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm

Quick reference data

Parameter

drain-source voltage

gate-source voltage

drain current

drain-source on-state

resistance

Conditions

= 25 °C

= -200 mA; T

= -4.5 V; T

= -4.5 V;



amb

ESD protection up to 2 kV

AEC-Q101 qualified

High-side loadswitch

Switching circuits

= 25 °C

[1]

Min

-8

Product data sheet

Typ

2.8

Max Unit

-30

-200 mA

4.1

Ω

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