SST39VF040 Silicon Storage Technology, Inc, SST39VF040 Datasheet
SST39VF040
Manufacturer Part Number
SST39VF040
Description
Manufacturer
Silicon Storage Technology, Inc
Specifications of SST39VF040
Case
TSOP
Date_code
06+
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FEATURES:
• Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8
• Single Voltage Read and Write Operations
• Superior Reliability
• Low Power Consumption
• Sector-Erase Capability
• Fast Read Access Time:
• Latched Address and Data
PRODUCT DESCRIPTION
The SST39LF512/010/020/040 and SST39VF512/010/
020/040 are 64K x8, 128K x8, 256K x8 and 5124K x8
CMOS Multi-Purpose Flash (MPF) manufactured with
SST’s proprietary, high performance CMOS SuperFlash
technology. The split-gate cell design and thick-oxide tun-
neling injector attain better reliability and manufacturability
compared with alternate approaches. The SST39LF512/
010/020/040 devices write (Program or Erase) with a 3.0-
3.6V power supply. The SST39VF512/010/020/040
devices write with a 2.7-3.6V power supply. The devices
conform to JEDEC standard pinouts for x8 memories.
Featuring
SST39LF512/010/020/040 and SST39VF512/010/020/
040 devices provide a maximum Byte-Program time of 20
µsec. These devices use Toggle Bit or Data# Polling to indi-
cate the completion of Program operation. To protect
against inadvertent write, they have on-chip hardware and
Software Data Protection schemes. Designed, manufac-
tured, and tested for a wide spectrum of applications, they
are offered with a guaranteed typical endurance of 10,000
cycles. Data retention is rated at greater than 100 years.
The SST39LF512/010/020/040 and SST39VF512/010/
020/040 devices are suited for applications that require
convenient and economical updating of program, configu-
ration, or data memory. For all system applications, they
©2005 Silicon Storage Technology, Inc.
S71150-09-000
1
512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
– 3.0-3.6V for SST39LF512/010/020/040
– 2.7-3.6V for SST39VF512/010/020/040
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
(typical values at 14 MHz)
– Active Current: 5 mA (typical)
– Standby Current: 1 µA (typical)
– Uniform 4 KByte sectors
– 45 ns for SST39LF512/010/020/040
– 55 ns for SST39LF020/040
– 70 and 90 ns for SST39VF512/010/020/040
high
SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040
SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040
SST39LF/VF512 / 010 / 020 / 0403.0 & 2.7V 512Kb / 1Mb / 2Mb / 4Mb (x8) MPF memories
performance
1/06
Byte-Program,
the
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
• Fast Erase and Byte-Program:
• Automatic Write Timing
• End-of-Write Detection
• CMOS I/O Compatibility
• JEDEC Standard
• Packages Available
• All non-Pb (lead-free) devices are RoHS compliant
significantly improves performance and reliability, while low-
ering power consumption. They inherently use less energy
during Erase and Program than alternative flash technolo-
gies. The total energy consumed is a function of the
applied voltage, current, and time of application. Since for
any given voltage range, the SuperFlash technology uses
less current to program and has a shorter erase time, the
total energy consumed during any Erase or Program oper-
ation is less than alternative flash technologies. These
devices also improve flexibility while lowering the cost for
program, data, and configuration storage applications.
The SuperFlash technology provides fixed Erase and Pro-
gram times, independent of the number of Erase/Program
cycles that have occurred. Therefore the system software
or hardware does not have to be modified or de-rated as is
necessary with alternative flash technologies, whose Erase
and Program times increase with accumulated Erase/Pro-
gram cycles.
To meet surface mount requirements, the SST39LF512/
010/020/040 and SST39VF512/010/020/040 devices are
offered in 32-lead PLCC and 32-lead TSOP packages. The
SST39LF/VF010 and SST39LF/VF020 are also offered in
a 48-ball TFBGA package. See Figures 1, 2, 3, and 4 for
pin assignments.
– Sector-Erase Time: 18 ms (typical)
– Chip-Erase Time: 70 ms (typical)
– Byte-Program Time: 14 µs (typical)
– Chip Rewrite Time:
– Internal V
– Toggle Bit
– Data# Polling
– Flash EEPROM Pinouts and command sets
– 32-lead PLCC
– 32-lead TSOP (8mm x 14mm)
– 48-ball TFBGA (6mm x 8mm)
– 34-ball WFBGA (4mm x 6mm) for 1M and 2M
1 second (typical) for SST39LF/VF512
2 seconds (typical) for SST39LF/VF010
4 seconds (typical) for SST39LF/VF020
8 seconds (typical) for SST39LF/VF040
PP
Generation
These specifications are subject to change without notice.
MPF is a trademark of Silicon Storage Technology, Inc.
Data Sheet
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