SST29EE512-90-4C-PH Silicon Storage Technology, Inc, SST29EE512-90-4C-PH Datasheet
![no-image](/images/no-image-200.jpg)
SST29EE512-90-4C-PH
Manufacturer Part Number
SST29EE512-90-4C-PH
Description
Manufacturer
Silicon Storage Technology, Inc
Datasheet
1.SST29EE512-90-4C-NH.pdf
(26 pages)
Specifications of SST29EE512-90-4C-PH
Case
PLCC
Date_code
06+
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SST29EE512-90-4C-PH
Manufacturer:
SST
Quantity:
6 100
Company:
Part Number:
SST29EE512-90-4C-PH
Manufacturer:
SST
Quantity:
6 100
FEATURES:
• Single Voltage Read and Write Operations
• Superior Reliability
• Low Power Consumption
• Fast Page-Write Operation
• Fast Read Access Time
• Latched Address and Data
PRODUCT DESCRIPTION
The SST29EE512 is a 64K x8 CMOS, Page-Write
EEPROM manufactured with SST’s proprietary, high-per-
formance CMOS SuperFlash technology. The split-gate
cell design and thick-oxide tunneling injector attain better
reliability and manufacturability compared with alternate
approaches. The SST29EE512 writes with a single
power supply. Internal Erase/Program is transparent to
the user. The SST29EE512 conforms to JEDEC stan-
dard pin assignments for byte-wide memories.
Featuring
SST29EE512 provides a typical Byte-Write time of 39
µsec. The entire memory, i.e., 64 KByte, can be written
page-by-page in as little as 2.5 seconds, when using
interface features such as Toggle Bit or Data# Polling to
indicate the completion of a Write cycle. To protect
against inadvertent write, the SST29EE512 have on-chip
hardware and Software Data Protection schemes.
Designed, manufactured, and tested for a wide spectrum
of applications, the SST29EE512 is offered with a guar-
anteed Page-Write endurance of 10,000 cycles. Data
retention is rated at greater than 100 years.
©2005 Silicon Storage Technology, Inc.
S71060-09-000
1
– 4.5-5.5V for SST29EE512
– Endurance: 100,000 Cycles (typical)
– Greater than 100 years Data Retention
– Active Current: 20 mA (typical)
– Standby Current: 10 µA (typical)
– 128 Bytes per Page, 512 Pages
– Page-Write Cycle: 5 ms (typical)
– Complete Memory Rewrite: 2.5 sec (typical)
– Effective Byte-Write Cycle Time: 39 µs (typical)
– 4.5-5.5V operation: 70 ns
high
512 Kbit (64K x8) Page-Write EEPROM
performance
SST29EE512512Kb (x8) Page-Write, Small-Sector flash memories
9/05
Page-Write,
SST29EE512
the
The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.
• Automatic Write Timing
• End of Write Detection
• Hardware and Software Data Protection
• Product Identification can be accessed via
• TTL I/O Compatibility
• JEDEC Standard
• Packages Available
• All non-Pb (lead-free) devices are RoHS compliant
The SST29EE512 is suited for applications that require
convenient and economical updating of program, config-
uration, or data memory. For all system applications, the
SST29EE512 significantly improves performance and
reliability, while lowering power consumption. The
SST29EE512 improves flexibility while lowering the cost
for program, data, and configuration storage applications.
To meet high density, surface mount requirements, the
SST29EE512 is offered in 32-lead PLCC and 32-lead
TSOP packages. A 600-mil, 32-pin PDIP package is also
available. See Figures 1, 2, and 3 for pin assignments.
Device Operation
The SST Page-Write EEPROM offers in-circuit electrical
write capability. The SST29EE512 does not require sepa-
rate Erase and Program operations. The internally timed
Write cycle executes both erase and program transparently
to the user. The SST29EE512 has industry standard
optional Software Data Protection, which SST recom-
mends always to be enabled. The SST29EE512 is com-
patible with industry standard EEPROM pinouts and
functionality.
– Internal V
– Toggle Bit
– Data# Polling
Software Operation
– Flash EEPROM Pinouts and command sets
– 32-lead PLCC
– 32-lead TSOP (8mm x 20mm)
– 32-pin PDIP
PP
Generation
These specifications are subject to change without notice.
SSF is a trademark of Silicon Storage Technology, Inc.
Data Sheet