MX29LV004BTC-70 Macronix International Co., MX29LV004BTC-70 Datasheet

MX29LV004BTC-70

Manufacturer Part Number

MX29LV004BTC-70

Description

Manufacturer

Macronix International Co.

Datasheets

1.MX29LV004TTI-90.pdf (54 pages)

2.MX29LV004TTI-90.pdf (54 pages)

3.MX29LV004TTI-90.pdf (54 pages)

Specifications of MX29LV004BTC-70

Case

TSOP40

Date_code

2006+

Current page: 1 of 54
Download datasheet (543Kb)

FEATURES

• Extended single - supply voltage range 2.7V to 3.6V

• 524,288 x 8

• Single power supply operation

• Fast access time: 55R/70/90ns

• Low power consumption

• Command register architecture

• Auto Erase (chip & sector) and Auto Program

• Erase suspend/Erase Resume

GENERAL DESCRIPTION

The MX29LV004T/B is a 4-mega bit Flash memory or-

ganized as 512K bytes of 8 bits. MXIC's Flash memo-

ries offer the most cost-effective and reliable read/write

non-volatile random access memory. The MX29LV004T/

B is packaged in 40-pin TSOP and 32-pin PLCC. It is

designed to be reprogrammed and erased in system or

in standard EPROM programmers.

The standard MX29LV004T/B offers access time as fast

as 55ns, allowing operation of high-speed microproces-

sors without wait states. To eliminate bus contention,

the MX29LV004T/B has separate chip enable (CE) and

output enable (OE) controls.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29LV004T/B uses a command register to manage

this functionality. The command register allows for 100%

P/N:PM0732

- 3.0V only operation for read, erase and program

operation

- 20mA maximum active current

- 0.2uA typical standby current

- Byte Programming (9us typical)

- Sector Erase (Sector structure 16K-Byte x 1,

8K-Byte x 2, 32K-Byte x1, and 64K-Byte x7)

- Automatically erase any combination of sectors with

Erase Suspend capability.

- Automatically program and verify data at specified

address

- Suspends sector erase operation to read data from,

or program data to, any sector that is not being erased,

then resumes the erase.

4M-BIT [512K x 8] CMOS SINGLE VOLTAGE

• Status Reply

• Ready/Busy pin (RY/BY)

• Sector protection

• 100,000 minimum erase/program cycles

• Latch-up protected to 100mA from -1V to VCC+1V

• Boot Sector Architecture

• Low VCC write inhibit is equal to or less than 2.3V

• Package type:

• Compatibility with JEDEC standard

TTL level control inputs and fixed power supply levels

during erase and programming, while maintaining maxi-

mum EPROM compatibility.

MXIC Flash technology reliably stores memory contents

even after 100,000 erase and program cycles. The MXIC

cell is designed to optimize the erase and programming

mechanisms. In addition, the combination of advanced

tunnel oxide processing and low internal electric fields

for erase and program operations produces reliable cy-

cling. The MX29LV004T/B uses a 2.7V~3.6V VCC sup-

ply to perform the High Reliability Erase and auto Pro-

gram/Erase algorithms.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up pro-

tection is proved for stresses up to 100 milliamps on

address and data pin from -1V to VCC + 1V.

- Data polling & Toggle bit for detection of program and

erase operation completion.

- Provides a hardware method of detecting program or

erase operation completion.

- Hardware method to disable any combination of

sectors from program or erase operations

- Tempoary sector unprotect allows code changes in

previously locked sectors.

- T = Top Boot Sector

- B = Bottom Boot Sector

- 40-pin TSOP

- 32-pin PLCC

- Pinout and software compatible with single-power

supply Flash

MX29LV004T/B

3V ONLY FLASH MEMORY

PRELIMINARY

REV. 1.1, SEP. 19, 2001

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