MX29F080MC-90 Macronix International Co., MX29F080MC-90 Datasheet

MX29F080MC-90

Manufacturer Part Number

MX29F080MC-90

Description

Manufacturer

Macronix International Co.

Datasheets

1.MX29F080MC-90.pdf (38 pages)

2.MX29F080.pdf (38 pages)

3.MX29F080MC-90.pdf (38 pages)

Specifications of MX29F080MC-90

Date_code

10+

Available stocks

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Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MX29F080MC-90

Manufacturer:

MXIC

Quantity:

3 500

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MX29F080MC-90

Manufacturer:

MXIC

Quantity:

3 500

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FEATURES

•

GENERAL DESCRIPTION

The MX29F080 is a 8-mega bit Flash memory organized

as 1024K bytes of 8 bits. MXIC's Flash memories offer

the most cost-effective and reliable read/write non-vola-

tile random access memory. The MX29F080 is pack-

aged in 40-pin TSOP or 44-pin SOP. It is designed to be

reprogrammed and erased in system or in standard

EPROM programmers.

The standard MX29F080 offers access time as fast as

70ns, allowing operation of high-speed microprocessors

without wait states. To eliminate bus contention, the

MX29F080 has separate chip enable (CE) and output

enable (OE ) controls.

MXIC's Flash memories augment EPROM functionality

with in-circuit electrical erasure and programming. The

MX29F080 uses a command register to manage this

functionality. The command register allows for 100%

P/N:PM0579

1,048,576 x 8 byte mode only

Single power supply operation

- 5.0V only operation for read, erase and program

operation

Fast access time: 70/90/120ns

Low power consumption

- 30mA maximum active current

- 0.2uA typical standby current

Command register architecture

- Byte Programming (7us typical)

- Sector Erase of 16 equal sector with 64K-Byte each

Auto Erase (chip & sector) and Auto Program

- Automatically erase any combination of sectors with

Erase Suspend capability.

- Automatically program and verify data at specified

address

Erase suspend/Erase Resume

- Suspends sector erase operation to read data from,

or program data to, another sector that is not being

erased, then resumes the erase.

8M-BIT [1024K x 8] CMOS EQUAL SECTOR FLASH MEMORY

•

TTL level control inputs and fixed power supply levels

during erase and programming, while maintaining maxi-

mum EPROM compatibility.

MXIC Flash technology reliably stores memory contents

even after 10,000 erase and program cycles. The MXIC

cell is designed to optimize the erase and program

mechanisms. In addition, the combination of advanced

tunnel oxide processing and low internal electric fields

for erase and programming operations produces reliable

cycling. The MX29F080 uses a 5.0V±10% VCC supply

to perform the High Reliability Erase and auto Program/

Erase algorithms.

The highest degree of latch-up protection is achieved

with MXIC's proprietary non-epi process. Latch-up pro-

tection is proved for stresses up to 100 milliamps on

address and data pin from -1V to VCC + 1V.

Status Reply

- Data polling & Toggle bit for detection of program

and erase operation completion.

Ready/Busy (RY/BY)

- Provides a hardware method of detecting program

and erase operation completion.

Sector Group protect/chip unprotect for 5V/12V sys-

tem.

Sector Group protection

- Hardware protect method for each group which con-

sists of two adjacent sectors

- Temporary sector group unprotect allows code

changes in previously locked sectors

10,000 minimum erase/program cycles

Latch-up protected to 100mA from -1V to VCC+1V

Low VCC write inhibit is equal to or less than 3.2V

Package type:

- 40-pin TSOP or 44-pin SOP

Compatibility with JEDEC standard

- Pinout and software compatible with single-power

supply Flash

MX29F080

PRELIMINARY

REV. 1.6, NOV, 21, 2002

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