SST29EE0201204CPH Silicon Storage Technology, Inc, SST29EE0201204CPH Datasheet

SST29EE0201204CPH

Manufacturer Part Number

SST29EE0201204CPH

Description

DIP-32

Manufacturer

Silicon Storage Technology, Inc

Datasheets

1.SST29LE020-200-4I-NH.pdf (28 pages)

2.SST29EE0201204CPH.pdf (26 pages)

Specifications of SST29EE0201204CPH

Date_code

04+

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FEATURES:

• Single Voltage Read and Write Operations

• Superior Reliability

• Low Power Consumption

• Fast Page-Write Operation

• Fast Read Access Time

PRODUCT DESCRIPTION

The SST29EE/LE/VE020 are 256K x8 CMOS Page-Write

EEPROM manufactured with SST’s proprietary, high per-

formance CMOS SuperFlash technology. The split-gate

cell design and thick oxide tunneling injector attain better

reliability and manufacturability compared with alternate

approaches. The SST29EE/LE/VE020 write with a single

power supply. Internal Erase/Program is transparent to the

user. The SST29EE/LE/VE020 conform to JEDEC stan-

dard pinouts for byte-wide memories.

Featuring high performance Page-Write, the SST29EE/LE/

VE020 provide a typical Byte-Write time of 39 µsec. The

entire memory, i.e., 256 KByte, can be written page-by-

page in as little as 10 seconds, when using interface fea-

tures such as Toggle Bit or Data# Polling to indicate the

completion of a Write cycle. To protect against inadvertent

write, the SST29EE/LE/VE020 have on-chip hardware and

Software Data Protection schemes. Designed, manufac-

tured, and tested for a wide spectrum of applications, the

SST29EE/LE/VE020 are offered with a guaranteed Page-

Write endurance of 10,000 cycles. Data retention is rated at

greater than 100 years.

S71062-09-EOL

– 4.5-5.5V for SST29EE020

– 3.0-3.6V for SST29LE020

– 2.7-3.6V for SST29VE020

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

– Active Current: 20 mA (typical) for 5V and

– Standby Current: 10 µA (typical)

– 128 Bytes per Page, 2048 Pages

– Page-Write Cycle: 5 ms (typical)

– Complete Memory Rewrite: 10 sec (typical)

– Effective Byte-Write Cycle Time: 39 µs (typical)

– 4.5-5.5V operation: 120 ns

– 3.0-3.6V operation: 200 ns

– 2.7-3.6V operation: 200 ns

10 mA (typical) for 3.0/2.7V

2 Mbit (256K x8) Page-Write EEPROM

SST29EE / LE / VE0202Mb (x8) Page-Write, Small-Sector flash memories

8/05

SST29EE020 / SST29LE020 / SST29VE020

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

• Latched Address and Data

• Automatic Write Timing

• End of Write Detection

• Hardware and Software Data Protection

• Product Identification can be accessed via

• TTL I/O Compatibility

• JEDEC Standard

• Packages Available

The SST29EE/LE/VE020 are suited for applications

that require convenient and economical updating of

program, configuration, or data memory. For all sys-

tem applications, the SST29EE/LE/VE020 significantly

improve performance and reliability, while lowering

power

improve flexibility while lowering the cost for program,

data, and configuration storage applications.

To meet high density, surface mount requirements, the

SST29EE/LE/VE020 are offered in 32-lead PLCC and

32-lead TSOP packages. A 600-mil, 32-pin PDIP pack-

age is also available. See Figures 1, 2, and 3 for pinouts.

Device Operation

The SST Page-Write EEPROM offers in-circuit electrical

write capability. The SST29EE/LE/VE020 does not require

separate Erase and Program operations. The internally

timed Write cycle executes both erase and program trans-

parently to the user. The SST29EE/LE/VE020 have indus-

try standard optional Software Data Protection, which SST

recommends always to be enabled. The SST29EE/LE/

VE020 are compatible with industry standard EEPROM

pinouts and functionality.

– Internal V

– Toggle Bit

– Data# Polling

Software Operation

– Flash EEPROM Pinouts and command sets

– 32-lead PLCC

– 32-lead TSOP (8mm x 20mm)

– 32-pin PDIP

consumption.

Generation

These specifications are subject to change without notice.

SSF is a trademark of Silicon Storage Technology, Inc.

The

EOL Product Data Sheet

SST29EE/LE/VE020

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