SST39VF160704CEK Silicon Storage Technology, Inc, SST39VF160704CEK Datasheet

SST39VF160704CEK

Manufacturer Part Number

SST39VF160704CEK

Description

TSOP48

Manufacturer

Silicon Storage Technology, Inc

Datasheet

1.SST39VF160704CEK.pdf (24 pages)

Specifications of SST39VF160704CEK

Date_code

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FEATURES:

• Organized as 1M x16

• Single Voltage Read and Write Operations

• Superior Reliability

• Low Power Consumption

• Sector-Erase Capability

• Fast Read Access Time

• Latched Address and Data

PRODUCT DESCRIPTION

The SST39LF/VF160 devices are 1M x16 CMOS Multi-

Purpose Flash (MPF) manufactured with SST’s propri-

etary, high performance CMOS SuperFlash technology.

The split-gate cell design and thick-oxide tunneling injec-

tor attain better reliability and manufacturability compared

with alternate approaches. The SST39LF160 write (Pro-

gram or Erase) with a 3.0-3.6V power supply. The

SST39VF160 write (Program or Erase) with a 2.7-3.6V

power supply. These devices conform to JEDEC standard

pinouts for x16 memories.

Featuring

SST39LF/VF160 devices provide a typical Word-Program

time of 14 µsec. These devices use Toggle Bit or Data#

Polling to indicate the completion of Program operation.

To protect against inadvertent write, they have on-chip

hardware and Software Data Protection schemes.

Designed, manufactured, and tested for a wide spectrum

of applications, these devices are offered with a guaran-

teed typical endurance of 10,000 cycles. Data retention is

rated at greater than 100 years.

The SST39LF/VF160 devices are suited for applications

that require convenient and economical updating of pro-

gram, configuration, or data memory. For all system appli-

cations, they significantly improve performance and

reliability, while lowering power consumption. They inher-

ently use less energy during Erase and Program than

alternative flash technologies. The total energy consumed

is a function of the applied voltage, current, and time of

S71145-04-000 11/03

– 3.0-3.6V for SST39LF160

– 2.7-3.6V for SST39VF160

– Endurance: 100,000 Cycles (typical)

– Greater than 100 years Data Retention

(typical values at 14 MHz)

– Active Current: 12 mA (typical)

– Standby Current: 4 µA (typical)

– Auto Low Power Mode: 4 µA (typical)

– Uniform 2 KWord sectors

– 55 ns for SST39LF160

– 70 and 90 ns for SST39VF160

high

performance

16 Mbit (x16) Multi-Purpose Flash

399

SST39LF/VF1603.0 & 2.7V 16Mb (x16) MPF memories

SST39LF160 / SST39VF160

Word-Program,

the

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

• Fast Erase and Word-Program

• Automatic Write Timing

• End-of-Write Detection

• CMOS I/O Compatibility

• JEDEC Standard

• Packages Available

application. Since for any given voltage range, the Super-

Flash technology uses less current to program and has a

shorter erase time, the total energy consumed during any

Erase or Program operation is less than alternative flash

technologies. These devices also improve flexibility while

lowering the cost for program, data, and configuration

storage applications.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as

is necessary with alternative flash technologies, whose

Erase and Program times increase with accumulated

Erase/Program cycles.

To meet high density, surface mount requirements, the

SST39LF/VF160 are offered in a 48-lead TSOP and a

48-ball TFBGA package. See Figures 1 and 2 for pin

assignments.

Device Operation

Commands are used to initiate the memory operation func-

tions of the device. Commands are written to the device

using standard microprocessor write sequences. A com-

mand is written by asserting WE# low while keeping CE#

low. The address bus is latched on the falling edge of WE#

or CE#, whichever occurs last. The data bus is latched on

the rising edge of WE# or CE#, whichever occurs first.

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 70 ms (typical)

– Word-Program Time: 14 µs (typical)

– Chip Rewrite Time: 15 seconds (typical) for

– Internal V

– Toggle Bit

– Data# Polling

– Flash EEPROM Pinouts and command sets

– 48-lead TSOP (12mm x 20mm)

– 48-ball TFBGA (8mm x 10mm)

SST39LF/VF160

Generation

These specifications are subject to change without notice.

MPF is a trademark of Silicon Storage Technology, Inc.

Data Sheet

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