K4D261638E-TC2A SAMSUNG [Samsung semiconductor], K4D261638E-TC2A Datasheet - Page 15

• Manufacturer Part Number: K4D261638E-TC2A
• Description: 2M x 16Bit x 4 Banks Double Data Rate Synchronous DRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

COMMAND
K4D261638E-TC36
K4D261638E-TC40
K4D261638E-TC50
Simplified Timing @ BL=4
(A0~A9,
BA[1:0]
CK, CK
A10/AP
K4D261638E
275MHz ( 3.6ns )
250MHz ( 4.0ns )
200MHz ( 5.0ns )
250MHz ( 4.0ns )
200MHz ( 5.0ns )
200MHz ( 5.0ns )
ADDR
A11)
DQS
WE
DM
DQ
Frequency
Frequency
ACTIVEA
Frequency
Ra
BAa
Ra
Ra
0
1
tRCD
2
Normal Write Burst
WRITEA
Cas Latency
Cas Latency
Cas Latency
BAa
Ca
(@ BL=4)
3
tRAS
4
3
3
3
3
3
Da0 Da1 Da2 Da3
4
5
tRC
tRC
tRC
tRC
15
13
12
13
12
12
6
7
PRECH
tRFC
tRFC
tRFC
BAa
17
15
14
15
14
14
8
9
tRP
tRAS
tRAS
tRAS
10
9
8
9
8
8
10
- 15 -
ACTIVEA
BAa
Ra
Multi Bank Interleaving Write Burst
Ra
11
tRCDRD tRCDWR
tRCDRD tRCDWR
tRCDRD tRCDWR
tRRD
4
4
4
4
4
4
12
ACTIVEB WRITEA
BAb
Rb
Rb
(@ BL=4)
13
BAa
Ca
14
2
2
2
2
2
2
Da0 Da1 Da2 Da3
15
WRITEB
BAb
Cb
tRP
tRP
tRP
16
5
4
4
4
4
4
128M DDR SDRAM
Db0 Db1
17
Db2
tRRD
tRRD
tRRD
Rev. 1.2 (Jul. 2003)
Db3
18
3
3
3
3
3
3
19
tDAL
tDAL
tDAL
20
8
7
7
7
7
7
21
Unit
Unit
tCK
tCK
tCK
tCK
tCK
Unit
tCK
22