K4D263238A-GC36 SAMSUNG [Samsung semiconductor], K4D263238A-GC36 Datasheet - Page 11
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K4D263238A-GC36
Manufacturer Part Number
K4D263238A-GC36
Description
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
1.K4D263238A-GC36.pdf
(17 pages)
AC INPUT OPERATING CONDITIONS
K4D263238A-GC
Recommended operating conditions Unless Otherwise Noted, T
DC CHARACTERISTICS
Recommended operating conditions(Voltage referenced to V
Note :
Operating Current
(One Bank Active)
Precharge Standby Current
in Power-down mode
Precharge Standby Current
in Non Power-down mode
Active Standby Current
power-down mode
Active Standby Current in
in Non Power-down mode
Note : 1. Measured with outputs open.
Operating Current
Refresh Current
Self Refresh Current
Operating Current
(4Bank interleaving)
Input High (Logic 1) Voltage; DQ
Input Low (Logic 0) Voltage; DQ
Clock Input Differential Voltage; CK and CK
Clock Input Crossing Point Voltage; CK and CK
( Burst Mode)
1. V
2. The value of V
2. Refresh period is 32ms.
Parameter
ID
is the magnitude of the difference between the input level on CK and the input level on CK
Parameter
IX
is expected to equal 0.5*V
Symbol
I
I
I
I
I
I
I
I
I
CC1
CC2
CC2
CC3
CC3
CC4
CC5
CC6
CC7
P
N
P
N
Burst Lenth=2
I
CKE ≤ V
CKE ≥ V
t
CKE ≤ V
CKE ≥ VIH(min), CS ≥ VIH(min),
t
I
Page Burst, All Banks activated.
Burst Length=4
I
OL
OL
CC
CC
OL
=0mA ,
=0mA,
=0mA,
=
=
t
t
CC
CC
(min)
IL
(min)
Test Condition
IH
IL
t
RC
(max),
(max),
t
t
t
(min), CS ≥ V
CKE ≤ 0.2V
CC
CC
CC
DDQ
≥
=
=
=
Symbol
t
RFC
t
t
t
t
RC
CC
CC
CC
V
V
V
of the transmitting device and must track variations in the DC level of the same
V
t
t
t
CC
CC
RC
IH
ID
IX
IL
(min)
(min),
(min)
(min)
≥
SS
=
=
t
≥
RC
=0V, V
t
t
CC
CC
t
RC
- 11 -
IH
(min)
(min)
(min)
(min),
(min)
0.5*V
DD
V
A
REF
=0 to 65
=2.5V+ 5%, V
Min
0.7
DDQ
+0.35
-
430
120
120
310
740
300
960
-33
-0.2
75
°
C)
DDQ
410
280
690
290
900
115
110
-36
70
Typ
=2.5V+ 5%,T
-
-
-
-
Version
380
110
100
240
640
280
830
-40
65
4
0.5*V
128M DDR SDRAM
V
V
REF
A
DDQ
Max
=0 to 65°C)
DDQ
370
100
100
230
610
270
750
-
-45
-0.35
65
+0.6
Rev. 2.0 (Jan. 2003)
+0.2
350
100
100
230
570
260
690
-50
65
Unit
V
V
V
V
Unit Note
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note
1
2
1
2