K4T51043QG SAMSUNG [Samsung semiconductor], K4T51043QG Datasheet - Page 29

• Manufacturer Part Number: K4T51043QG
• Description: 512Mb G-die DDR2 SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4T51043QG
K4T51083QG
K4T51163QG
DQS
Note1
Note : DQS signal must be monotonic between V
V
V
V
V
Setup Slew Rate
V
V
IL
IL
Falling Signal
REF
DDQ
IH
IH
(DC)max
Figure 6 - IIIustration of nominal slew rate for tDS (single-ended DQS)
(AC)max
(DC)min
(AC)min
V
V
V
V
V
V
V
(DC)
DDQ
IH
IH
REF
IL
IL
SS
(DC)max
(AC)max
(AC)min
(DC)min
V
(DC)
SS
V
region
REF
=
to ac
V
∆TF
REF
(DC) - V
∆TF
nominal slew
tDS
IL
rate
(AC)max
tDH
29 of 47
IL
Setup Slew Rate
(AC)max and V
Rising Signal
∆TR
tDS
nominal
slew rate
IH
=
(AC)min.
V
IH
(AC)min - V
tDH
V
∆TR
REF
region
to ac
Rev. 1.4 December 2008
REF
(DC)
DDR2 SDRAM