K4T1G084QD SAMSUNG [Samsung semiconductor], K4T1G084QD Datasheet - Page 5

• Manufacturer Part Number: K4T1G084QD
• Description: 1Gb D-die DDR2 SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4T1G084QD
K4T1G164QD
3.0 Package Pinout/Mechanical Dimension & Addressing
Ball Locations (x8)
3.1 x8 package pinout (Top View) : 60ball FBGA Package
Note:
1. Pins B3 and A2 have identical capacitance as pins B7 and A8.
2. For a read, when enabled, strobe pair RDQS & RDQS are identical in
3. The function of DM or RDQS/RDQS are enabled by EMRS command.
4. VDDL and VSSDL are power and ground for the DLL.
A
B
C
D
G
H
K
E
F
J
L
VDDQ
VDDL
VDD
DQ6
DQ4
VSS
VDD
BA2
function and timing to strobe pair DQS & DQS and input masking function
is disabled.
1
Top View (See the balls through the Package)
+
+
+
1
A10/AP
VSSQ
VSSQ
VREF
RDQS
DQ1
CKE
BA0
A12
NU/
2
A3
A7
2
+ : Depopulated Ball
3
: Populated Ball
VDDQ
RDQS
VSS
DQ3
VSS
BA1
DM
WE
NC
3
A1
A5
A9
+
+
+
+
+
+ + +
+ + +
+
+
+
+
4
/
+
+
+
+
+
+
+
+
+
5
3 of 29
G
A
B
C
D
E
H
K
F
J
L
+
+
+
+
+
+
+
+
+
6
VSSDL
VSSQ
VDDQ
DQS
DQ2
RAS
CAS
A11
NC
A2
A6
7
7
8
VSSQ
VSSQ
DQS
DQ0
A13
CK
CK
CS
A0
A4
A8
8
+
+
+
9
VDDQ
VDDQ
VDD
ODT
VDD
DQ7
DQ5
VSS
9
Rev. 1.0 March 2007
DDR2 SDRAM