K4T56163QI-ZCLCC SAMSUNG [Samsung semiconductor], K4T56163QI-ZCLCC Datasheet - Page 27

no-image

K4T56163QI-ZCLCC

Manufacturer Part Number
K4T56163QI-ZCLCC
Description
256Mb I-die DDR2 SDRAM Specification
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
K4T56163QI
V
V
V
V
V
V
Hold Slew Rate
REF(dc)
IL(dc)
IL(ac)
DDQ
IH(ac)
IH(dc)
Rising Signal
Figure 9 - IIIustration of nominal slew rate for tDH (differential DQS, DQS)
DQS
DQS
max
max
min
min
V
SS
dc to V
dc to V
region
region
=
V
REF(dc)
REF
REF
∆TR
- Vil(dc)max
slew rate
tDS
nominal
27 of 42
tDH
∆TR
Hold Slew Rate
Falling Signal
nominal
slew rate
tDS
=
Vih(dc)min - V
tDH
∆TF
∆TF
REF(dc)
Rev. 1.0 October 2007
DDR2 SDRAM

Related parts for K4T56163QI-ZCLCC