K4H510438D SAMSUNG [Samsung semiconductor], K4H510438D Datasheet - Page 10

• Manufacturer Part Number: K4H510438D
• Description: 512Mb D-die DDR SDRAM Specification
• Manufacturer: SAMSUNG [Samsung semiconductor]

Note :
1. VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of same. Peak-to peak noise on VREF may
2. V
3. VID is the magnitude of the difference between the input level on CK and the input level on CK.
4. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire temperature and voltage range,
The K4H510438D / K4H510838D / K4H511638D is 536,870,912 bits of double data rate synchronous DRAM organized as 4x
33,554,432 / 4x 16,777,216 / 4x 8,388,608 words by 4/8/16bits, fabricated with SAMSUNG′s high performance CMOS technology. Syn-
chronous features with Data Strobe allow extremely high performance up to 400Mb/s per pin. I/O transactions are possible on both
edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful
for a variety of high performance memory system applications.
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
K4H510438D
K4H510838D
K4H511638D
9.0 General Description
10.0 Absolute Maximum Rating
11.0 DC Operating Conditions
Supply voltage(for device with a nominal V
Supply voltage(for device with a nominal V
I/O Supply voltage(for device with a nominal V
I/O Supply voltage(for device with a nominal V
I/O Reference voltage
I/O Termination voltage(system)
Input logic high voltage
Input logic low voltage
Input Voltage Level, CK and CK inputs
Input Differential Voltage, CK and CK inputs
V-I Matching: Pullup to Pulldown Current Ratio
Input leakage current
Output leakage current
Output High Current(Normal strengh driver) ;V
Output High Current(Normal strengh driver) ;V
Output High Current(Half strengh driver) ;V
Output High Current(Half strengh driver) ;V
32M x 4Bit x 4 Banks / 16M x 8Bit x 4 Banks / 8M x 16Bit x 4 Banks Double Data Rate SDRAM
not exceed +/-2% of the dc value.
ations in the DC level of VREF
for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the maximum difference between pullup and pulldown drivers
due to process variation. The full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1.7 for device drain to
source voltages from 0.1 to 1.0.
TT
is not applied directly to the device. V
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Voltage on V
Voltage on any pin relative to V
Storage temperature
DD
Short circuit current
& V
Parameter
DDQ
supply relative to V
Parameter
TT
is a system supply for signal termination resistors, is expected to be set equal to VREF, and must track vari-
DD
DD
SS
OUT
OUT
of 2.5V for DDR266/333)
of 2.6V for DDR400)
DD
DD
OUT
OUT
= V
= V
SS
of 2.5V for DDR266/333)
of 2.5V for DDR400)
= V
TT
= V
TT
Recommended operating conditions(Voltage referenced to V
+ 0.45V
TT
- 0.45V
TT
+ 0.84V
- 0.84V
V
V
Symbol
DD
IN
T
, V
I
, V
STG
OS
OUT
DDQ
Symbol
VI(Ratio)
V
V
V
V
V
V
V
IH
IN
ID
IL
V
V
V
I
I
I
I
I
DDQ
DDQ
REF
(DC)
OZ
OH
OH
(DC)
(DC)
(DC)
OL
OL
I
DD
DD
TT
I
-55 ~ +150
-0.5 ~ 3.6
-1.0 ~ 3.6
0.49*VDDQ
V
V
Value
REF
REF
50
-16.8
0.36
0.71
16.8
Min
-0.3
-0.3
2.3
2.5
2.3
2.5
-2
-5
-9
9
+0.15
-0.04
Rev. 1.2 January 2006
0.51*VDDQ
V
V
V
V
V
REF
REF
DDQ
DDQ
DDQ
DDR SDRAM
Max
2.7
2.7
2.7
2.7
1.4
2
5
+0.04
-0.15
+0.3
+0.3
+0.6
SS
=0V, T
Unit
mA
°C
Unit
V
V
mA
mA
mA
mA
uA
uA
A
V
V
V
V
V
V
V
V
V
V
-
=0 to 70°C)
Note
1
2
3
4