IC42S16800 ICSI [Integrated Circuit Solution Inc], IC42S16800 Datasheet - Page 23
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IC42S16800
Manufacturer Part Number
IC42S16800
Description
4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
Manufacturer
ICSI [Integrated Circuit Solution Inc]
Datasheet
1.IC42S16800.pdf
(69 pages)
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IC42S81600/IC42S81600L
IC42S16800/IC42S16800L
Read / Write Command Interval
Read to Read Command Interval
During a read cycle when a new read command is asserted, it will be effective after the CAS latency, even if the previous
read operation has not completed. READ will be interrupted by another READ.
Each read command can be asserted in every clock without any restriction.
READ to READ Command Interval
Burst lengh=4, CAS latency=2
T0
T1
T2
T3
T4
T5
T6
T7
T8
CLK
Read B
Read A
Command
Hi-Z_
DQ
QA0
QB0
QB1
QB2
QB3
1 cycle
Write to Write Command Interval
During a write cycle, when a new Write command is asserted, the previous burst will terminate and the new burst will begin
with a new write command. WRITE will be interrupted by another WRITE.
Each write command can be asserted in every clock without any restriction.
WRITE to WRITE Command Interval
Burst lengh=4, CAS latency=2
T0
T1
T3
T6
T7
T2
T4
T5
T8
CLK
Write B
Write A
Command
Hi-Z_
QA0
QB0
DQ
QB1
QB2
QB3
1 cycle
Integrated Circuit Solution Inc.
23
DR023-0E 6/11/2004