K4S643233H-C SAMSUNG [Samsung semiconductor], K4S643233H-C Datasheet - Page 10

• Manufacturer Part Number: K4S643233H-C
• Description: Mobile-SDRAM
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4S643233H - F(H)E/N/G/C/L/F
A. MODE REGISTER FIELD TABLE TO PROGRAM MODES
Register Programmed with Normal MRS
Normal MRS Mode
Register Programmed with Extended MRS
EMRS for PASR(Partial Array Self Ref.) & DS(Driver Strength)
NOTES:
1. RFU(Reserved for future use) should stay "0" during MRS cycle.
2. If A9 is high during MRS cycle, "Burst Read Single Bit Write" function will be enabled.
Function
Function
A8
A9
Address
BA1
0
0
1
1
0
1
Address
0
0
1
1
A10/AP
Write Burst Length
A7
0
1
0
1
0
Test Mode
BA0
0
1
0
1
Mode Register Set
BA1
Single Bit
Mode Select
Length
"0" Setting for
Normal MRS
Burst
BA0 ~ BA1
Reserved
Reserved
Reserved
Mode Select
Type
EMRS for Mobile SDRAM
A9
BA0
0
Normal MRS
Reserved
Reserved
Mode
Reserved Address
A6
A10/AP
0
0
0
0
1
1
1
1
A8
0
A10/AP
RFU
A5
0
0
1
1
0
0
1
1
CAS Latency
*1
A4
0
1
0
1
0
1
0
1
RFU
A7
0
A9
A6
*1
0
0
1
1
Reserved
Reserved
Reserved
Reserved
Reserved
Latency
W.B.L
A9
1
2
3
*2
A5
A8
Driver Strength
0
1
0
1
A4
0
A8
Test Mode
BA1 BA0
Driver Strength
A3
0
1
0
A7
Reserved
Reserved
Mode Select
Burst Type
A7
Full
1/2
0
Sequential
Interleave
A6
A3
0
Type
mal MRS
for Nor-
Setting
A6
DS
Mode
CAS Latency
A5
A2
0
0
0
0
1
1
1
1
A5
A2
0
0
0
0
1
1
1
1
A4
A1
0
0
1
1
0
0
1
1
RFU
A4
A1
0
0
1
1
0
0
1
1
*1
A0
Full Page Length x32 : 64Mb(256)
A3
0
1
0
1
0
1
0
1
Mobile-SDRAM
A0
A3
BT
Burst Length
0
1
0
1
0
1
0
1
PASR
Size of Refreshed Array
Reserved
Reserved
Reserved
Full Page
A2
1/2 of Full Array
1/4 of Full Array
BT=0
A2
1
2
4
8
Full Array
Reserved
Reserved
Reserved
Reserved
Reserved
Burst Length
PASR
February 2004
A1
A1
Reserved
Reserved
Reserved
Reserved
BT=1
1
2
4
8
A0
A0