K4S64323LF-DP1L SAMSUNG [Samsung semiconductor], K4S64323LF-DP1L Datasheet - Page 5

• Manufacturer Part Number: K4S64323LF-DP1L
• Description: 2Mx32 Mobile SDRAM 90FBGA
• Manufacturer: SAMSUNG [Samsung semiconductor]

K4S64323LF-S(D)N/U/P
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to V
Notes :
1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S64323LF-S(D)N/P**
4. K4S64323LF-S(D)U**
5. Unless otherwise noted, input swing IeveI is CMOS(V
Operating Current
(One Bank Active)
Precharge Standby Current
in power-down mode
Precharge Standby Current
in non power-down mode
Active Standby Current
in power-down mode
Active Standby Current
in non power-down mode
(One Bank Active)
Operating Current
Refresh Current
Self Refresh Current
Parameter
Symbol
I
I
I
I
CC2
CC3
I
CC2
I
I
CC3
I
C C 2
C C 3
I
CC2
CC3
I
I
I
CC1
CC4
CC5
CC6
PS
NS
PS
NS
P
N
P
N
CKE V
CKE & CLK V
CKE V
Input signals are changed one time during 20ns
CKE V
Input signals are stable
CKE V
CKE & CLK V
CKE V
Input signals are changed one time during 20ns
CKE V
Input signals are stable
I
t
CKE 0.2V
Burst length = 1
t
I
O
RC
RC
O
= 0 mA ,Page burst
= 0 mA
t
t
RC
R C
IL
IH
IH
IL
IH
IH
(min)
(min)
(max), t
(max), t
(min), CS
(min), CLK V
(min), CS
(min), CLK V
IH
IL
IL
Test Condition
(max), t
(max), t
/V
CC
CC
IL
SS
=V
= 10ns
= 10ns
V
V
= 0V, T
DDQ
I H
I H
CC
CC
IL
IL
(min), t
(min), t
(max), t
(max), t
/V
=
=
SSQ).
A
= -25 C to 85 C for Extended, -40 C to 85 C for Industrial)
CC
CC
CC
CC
= 10ns
= 10ns
=
=
-S(D)N/P
-S(D)U
-75
115
70
85
-1H
110
70
70
Version
350
230
0.5
0.5
10
20
20
7
5
5
CMOS SDRAM
100
-1L
65
70
Rev. 1.5 Dec 2002
-15
60
60
80
Unit Note
mA
mA
mA
mA
mA
mA
mA
mA
uA
1
1
2
3
4