K4S561632C-L1H SAMSUNG [Samsung semiconductor], K4S561632C-L1H Datasheet - Page 8

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K4S561632C-L1H

Manufacturer Part Number
K4S561632C-L1H
Description
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM
Manufacturer
SAMSUNG [Samsung semiconductor]
Datasheet
AC CHARACTERISTICS
DQ BUFFER OUTPUT DRIVE CHARACTERISTICS
K4S561632C
Notes :
Notes :
Output rise time
Output fall time
Output rise time
Output fall time
CLK cycle
time
CLK to valid
output delay
Output data
hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output
in Hi-Z
Parameter
1. Parameters depend on programmed CAS latency.
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
1. Rise time specification based on 0pF + 50
2. Fall time specification based on 0pF + 50
3. Measured into 50pF only, use these values to characterize to.
4. All measurements done with respect to V
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
Parameter
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
Symbol
trh
tfh
trh
tfh
(AC operating conditions unless otherwise noted)
Symbol
t
t
t
t
SAC
t
t
t
t
t
SHZ
SLZ
CC
OH
CH
SH
CL
SS
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
Measure in linear
region : 1.2V ~ 1.8V
Min
Condition
2.5
2.5
2.5
1.5
6
1
1
-
-
-60
SS
1000
.
Max
to V
to V
5
5
-
-
DD
SS
, use these values to design to.
Min
7.5
7.5
2.5
2.5
1.5
0.8
, use these values to design to.
3
3
1
-7C
1000
Max
5.4
5.4
5.4
5.4
1.37
1.30
Min
2.8
2.0
Min
7.5
2.5
2.5
1.5
0.8
10
3
3
1
-75
1000
Max
5.4
5.4
6
6
Typ
3.9
2.9
Min
10
10
3
3
3
3
2
1
1
-1H
1000
Max
Max
4.37
6
6
6
6
3.8
5.6
5.0
Rev. 0.4 Sept. 2001
Min
10
12
3
3
3
3
2
1
1
CMOS SDRAM
-1L
Volts/ns
Volts/ns
Volts/ns
Volts/ns
1000
Max
Unit
6
7
6
7
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
Note
1,2
1,2
1,2
1
2
3
3
3
3
2
3
3

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