K9F1208B0B SAMSUNG [Samsung semiconductor], K9F1208B0B Datasheet - Page 28

• Manufacturer Part Number: K9F1208B0B
• Description: 64M x 8 Bit NAND Flash Memory
• Manufacturer: SAMSUNG [Samsung semiconductor]

K9F1208R0B
K9F1208B0B
K9F1208U0B
Multi-Plane Block Erase Operation
R/B
I/O
CLE
CE
WE
ALE
RE
I/O
R/B
* For Multi-Plane Erase operation, Block address to be erased should be repeated before "D0H" command.
Ex.) Four-Plane Block Erase Operation
0
X
~
7
Block Erase Setup Command
60h
A
Address
9
t
60h
WC
~ A
Max. 4 times repeatable
25
A
9
60h
~ A
16
Page(Row)
A
A
Address
17
9
~ A
~ A
25
24
A
25
60h
Erase Confirm Command
DOh
A
9
~ A
25
t
WB
28
60h
A
9
~ A
Busy
t
25
BERS
D0h
Read Multi-Plane
Status Command
t
BERS
71h
FLASH MEMORY
71h
Preliminary
I/O 0